PSMN3R3-80BS,118 Allicdata Electronics
Allicdata Part #:

1727-7108-2-ND

Manufacturer Part#:

PSMN3R3-80BS,118

Price: $ 0.92
Product Category:

Discrete Semiconductor Products

Manufacturer: Nexperia USA Inc.
Short Description: MOSFET N-CH 80V 120A D2PAK
More Detail: N-Channel 80V 120A (Tc) 306W (Tc) Surface Mount D2...
DataSheet: PSMN3R3-80BS,118 datasheetPSMN3R3-80BS,118 Datasheet/PDF
Quantity: 9600
800 +: $ 0.83564
Stock 9600Can Ship Immediately
$ 0.92
Specifications
Vgs(th) (Max) @ Id: 4V @ 1mA
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: D2PAK
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 306W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 8161pF @ 40V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 111nC @ 10V
Series: --
Rds On (Max) @ Id, Vgs: 3.5 mOhm @ 25A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Drain to Source Voltage (Vdss): 80V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR) 
Description

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The PSMN3R3-80BS Transistor is a single MOSFET (Metal Oxide Semiconductor Field Effect Transistor) and is mainly used for switching and amplification applications. It is designed for use in high-speed saturated switching applications in the power management, audio equipment and motor control markets.

The single MOSFET features an on-resistance of 0.09 Ohms and is able to carry a continuous drain current at 100°C of 80A. It is capable of operating at high frequencies and therefore is ideal for high-speed switching applications. It is provided in a thermally efficient PowerPAK SC-70 package which enables a wide range of thermal profiles. This allows the user to select a thermal profile that is most compatible with their application and increases efficiency.

The construction of the PSMN3R3-80BS Transistor is based on a structure known as a Metal Oxide Silicon Field Effect Transistor (MOSFET). This type of transistor is used more commonly in power management applications because they can handle high currents without significantly affecting the voltage. The voltage between the drain and the source of the PSMN3R3-80BS remains relatively constant regardless of the current that is passed through it. The MOSFETs are constructed of a metal oxide layer surrounded by a silicon base. The metal oxide layer is designed to be a resistive material, meaning it helps to control the passage of electricity through the transistor.

The operation of the PSMN3R3-80BS Transistor is based on the principle of controlling the flow of current between its source and its drain. The voltage applied to the gate determines the amount of current that can pass between the source and the drain. A higher gate voltage will cause more current to be passed between the source and the drain. This is the principle that is used by the PSMN3R3-80BS to control the current in an application.

Because the PSMN3R3-80BS Transistor is designed for use in high current applications, it has a low on-resistance that makes it an excellent choice for power management. This makes it a great choice for applications such as audio equipment, motor control, and power management. The PSMN3R3-80BS is also able to withstand high temperature environments, making it suitable for a wide range of applications.

The PSMN3R3-80BS Transistor is a great choice for applications that require high current control and high temperature operation. It is designed to with the PowerPAK SC-70 package which allows for a wide range of thermal profiles, and its low on-resistance makes it ideal for power management applications. It is also capable of operating at high frequencies, making it an excellent choice for high-speed switching applications.

The specific data is subject to PDF, and the above content is for reference

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