PSMN3R8-100BS,118

Vgs(th) (Max) @ Id:	4V @ 1mA
Package / Case:	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package:	D2PAK
Mounting Type:	Surface Mount
Operating Temperature:	-55°C ~ 175°C (TJ)
Power Dissipation (Max):	306W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	9900pF @ 50V
Vgs (Max):	±20V
Gate Charge (Qg) (Max) @ Vgs:	170nC @ 10V
Series:	--
Rds On (Max) @ Id, Vgs:	3.9 mOhm @ 25A, 10V
Drive Voltage (Max Rds On, Min Rds On):	10V
Current - Continuous Drain (Id) @ 25°C:	120A (Tc)
Drain to Source Voltage (Vdss):	100V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Active
Packaging:	Cut Tape (CT)

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Introduction

PSMN3R8-100BS,118 is a field effect transistor (FET) from NXP. It is a N-channel enhancement mode MOSFET and it is one of the most popular FETs in the market. This type of field effect transistor (FET) is especially suitable for switching applications because of its low on-state resistance and excellent voltage and current capabilities.

Application Field

This FET is generally used in power switching applications, for example in audio amplifiers, motor controls, inverters, lighting and many more. The PSMN3R8-100BS,118 is also suitable for battery charging applications as well as other commutation circuits. The most common applications for this FET are analog switching, Class-D audio amplifiers, converters, inverters, motor controls, off-line AC/DC or DC/DC converters, power control and switching, and high speed digital logic power supplies.

Features

The PSMN3R8-100BS,118 has some distinguished features compared to other FETs. It has a low parasitic capacitance of 3.2 pF and a maximum drain-source capacitance of 406 pF. It can also withstand 25 volts at an operating temperature of -55°C to 150°C. It has a compact die sized SOT223 package, which offers a low on-state resistance, allowing for high speed switching. It offers an electrical isolation voltage of 1000V and a minimum on-state resistance of 10 ohms.

Working Principle

The working principle of the PSMN3R8-100BS,118 FET is based on the physics phenomenon known as \'quantum tunneling.\' In this process, the electrical current is allowed to tunnel through an insulator or dielectric medium. It is also known as \'field effect\' because it works by controlling the electric field that surrounds the MOSFET. This electric field alters the conductivity of the channel between the source and the drain, thereby controlling the flow of current. In the case of the PSMN3R8-100BS,118 FET, the application of a voltage across the gate-source p-n junction causes the FET to turn on and allow the flow of current.

Conclusion

The PSMN3R8-100BS,118 is a field effect transistor (FET) from NXP. It is an N-channel enhancement mode MOSFET and it is suitable for switching applications because of its low on-state resistance and excellent voltage and current capabilities. This FET is commonly used in power switching applications such as audio amplifiers, motor controls and inverters because of its low parasitic capacitance and high drain-source capacitance. Its working principle is based on quantum tunneling and the application of a voltage across the gate-source p-n junction in order to turn on the FET and allow current flow.

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