PSMN4R4-80BS,118 Discrete Semiconductor Products

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PSMN4R4-80BS,118 Application Field and Working Principle

The PSMN4R4-80BS,118 is a N-channel enhancement mode MOSFET developed by NXP Semiconductors with an operating voltage of 30V, a drain current of 80A and a power of 209W. This MOSFET is specifically used in: audio amplifiers, battery solutions, DC/DC converters, hot switching, power supply systems and industrial solutions.

MOSFETs are also known as Unipolar Transistors, mostly because current conduction is only through one type of carrier, as opposed to Bipolar Junction Transistors (BJT), which use both electrons and holes. Due to this advantage, they are capable of switching faster and exerting a lower input drive power than BJTs.

The working principle of this device takes advantage of the fact that metal electrodes are capable of forming an electrical capacitance between two metal barriers. Without an electron in the system, the electric field created by the metal shields would be too high, but when an electron is introduced, the electric field is weakened, allowing for current to flow.

This phenomenon is known as the “weak inversion region” and it is the reason why MOSFETs are used as switches. By controlling the input and gate voltage, it is possible to change the amount of current flowing through the device. In the case of the PSMN4R4-80BS,118, the switch can handle currents of up to 80A and voltage up to 30V.

In conclusion, the PSMN4R4-80BS,118 is an exemplary device when it comes to heavy load applications, as it has a robust 60mΩ drain-source on-resistance and can handle currents of up to 80A. It is suitable for audio amplifiers, battery solutions, DC/DC converters, hot switching, power supply systems and industrial solutions.

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