PSMN5R4-25YLDX

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The PSMN5R4-25YLDX is a single N-channel MOSFET transistor developed by NEXPERIA. This device is made specifically for high-speed switching applications and is designed for voltages up to 25 volts and can handle currents up to 5.9 A. This makes it ideally suited for power management applications such as DC-DC converters and motor drivers. In this article we will take a look at the application field of the PSMN5R4-25YLDX and its working principle.

Application Field

The PSMN5R4-25YLDX is a single N-channel MOSFET transistor specifically designed for high-speed switching applications. These types of applications include DC-DC converters and motor drivers. In DC-DC converters the MOSFET is used as a low on-resistance switch that allows the converter to switch between different power supply voltages. In motor drivers the MOSFET can be used to control the speed of the motor or to reverse its direction. Other possible applications of this transistor include LED lighting and audio amplification.

Working Principle

The working principle of the PSMN5R4-25YLDX is based on the MOSFET concept. The MOSFET is a type of transistor that uses electrons as the main active component instead of a traditional electric current. In the case of the PSMN5R4-25YLDX, the electrons are used as the main switch. This means that when the voltage applied to the gate terminal is equal to or greater than the threshold voltage, the electrons are allowed to flow from the source to the drain terminal, switching on the transistor.

The PSMN5R4-25YLDX is an enhancement-mode MOSFET, which means that a positive voltage must be applied to the gate terminal to switch it on. This is the opposite of a depletion-mode MOSFET, which is switched on by applying a negative voltage to the gate terminal. The gate threshold voltage of the PSMN5R4-25YLDX is 4.5V, which means that a voltage of at least 4.5V must be applied to the gate terminal in order to switch the device on.

Characteristics and Features

The PSMN5R4-25YLDX has a low on-resistance (Rds) of 4.2 ohms. This means that it can handle high currents with minimal power loss. It also has a low gate capacitance (Cgs) of 0.7 pF, which makes it ideal for high-speed switching applications. The device also features a temperature range of -40°C to 125°C and a maximum drain-source voltage (Vds) rating of 25V, making it suitable for most applications.

In addition, the PSMN5R4-25YLDX has a Pb-free package (NiPb), which makes it RoHS compliant. It is also compliant with the ISO/IEC 10509 standard for electrical equipment and is certified for use in hazardous locations.

Conclusion

The PSMN5R4-25YLDX is a single N-channel MOSFET transistor designed for high-speed switching applications. It has a low on-resistance and a low gate capacitance, which makes it suitable for high-power applications. The device also has a temperature range of -40°C to 125°C and a maximum drain-source voltage rating of 25V, making it suitable for most applications. In addition, the PSMN5R4-25YLDX has a Pb-free package and is certified for use in hazardous locations. All these features make the PSMN5R4-25YLDX an ideal choice for power management applications such as DC-DC converters, motor drivers, and LED lighting.

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