Allicdata Part #: | 1727-5897-ND |
Manufacturer Part#: |
PSMN7R0-100ES,127 |
Price: | $ 2.01 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Nexperia USA Inc. |
Short Description: | MOSFET N-CH 100V I2PAK |
More Detail: | N-Channel 100V 100A (Tc) 269W (Tc) Through Hole I2... |
DataSheet: | PSMN7R0-100ES,127 Datasheet/PDF |
Quantity: | 867 |
1 +: | $ 1.82700 |
50 +: | $ 1.47508 |
100 +: | $ 1.32760 |
500 +: | $ 1.03256 |
Vgs(th) (Max) @ Id: | 4V @ 1mA |
Package / Case: | TO-262-3 Long Leads, I²Pak, TO-262AA |
Supplier Device Package: | I2PAK |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 269W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 6686pF @ 50V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 125nC @ 10V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 6.8 mOhm @ 15A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 100A (Tc) |
Drain to Source Voltage (Vdss): | 100V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Last Time Buy |
Packaging: | Tube |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
The PSMN7R0-100ES,127 is a single metal oxide semiconductor field effect transistor (MOSFET), used as a switch or amplifier device in a variety of electronic applications. It is a type of transistor that uses metal-oxide-semiconductor (MOS) technology to enable current flow between the source and drain terminals. It is a voltage-controlled device and has a higher current capacity than conventional bipolar transistors. The MOSFET is capable of amplifying signals in the range of DC and RF frequencies, making it a popular choice for many different types of applications such as radio-frequency amplifiers, power amplifiers, and other digital circuits.
The PSMN7R0-100ES,127 has two main terminals, the source and the drain, which are connected to the circuit through an epitaxial layer. The gate electrode, which is connected to the drain, is charged to control the amount of current flowing through the device. When the gate voltage is increased, the source-drain current increases, and when the gate voltage is lowered, the source-drain current decreases. The transistor is also equipped with a substrate connection, which is used as a reference voltage.
The PSMN725R0-100ES,127 is a versatile device and can be used in a variety of applications, including DC-DC converters, voltage-controlled amplifiers, switching converters, and low-frequency pre-amplifiers. The MOSFET is also used in power supplies, motor control, switched-mode power supplies, and in audio amplifiers, due to its high input impedance, low on-state resistance, and low capacitive gate charge. Additionally, the MOSFET can be used in high-speed logic circuits, due to its high switching speed and low operating voltage.
The PSMN7R0-100ES,127 is capable of operating in both depletion and enhancement mode, allowing for a variety of different ways looking to apply a potential to the gate. In depletion mode, the device acts as a resistor between the source and drain terminals, while in enhancement mode, it acts as a current amplifier. The device is also capable of high-speed switching and low-power consumption, making it perfect for use in low-power and digital circuits.
The PSMN7R0-100ES,127 is a useful and versatile device for a variety of applications in the field of electronics. Its features, such as its high input impedance, low on-state resistance, and low gate charge, make it an excellent choice for many different types of circuits.
The specific data is subject to PDF, and the above content is for reference
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