PSMN7R5-30MLDX

Series:	--
Packaging:	Tape & Reel (TR)
Part Status:	Active
FET Type:	N-Channel
Technology:	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):	30V
Current - Continuous Drain (Id) @ 25°C:	57A (Tc)
Drive Voltage (Max Rds On, Min Rds On):	4.5V, 10V
Rds On (Max) @ Id, Vgs:	7.6 mOhm @ 15A, 10V
Vgs(th) (Max) @ Id:	2.2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:	11.3nC @ 10V
Vgs (Max):	±20V
Input Capacitance (Ciss) (Max) @ Vds:	655pF @ 15V
FET Feature:	--
Power Dissipation (Max):	45W (Tc)

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Introduction

The PSMN7R5-30MLDX is a 30 milliamp N-channel enhancement mode MOSFET. It is designed to switch low voltage operations efficiently. This MOSFET is rated to operate in a temperature range of -55 °C to +150 °C. The device is capable of supporting high temperature applications due to its enhanced working principle which enables the leakage current to stay low even after enduring extreme temperatures.

Application Field

The PSMN7R5-30MLDX is mainly used in amplifiers, voltage regulators, and other small power switching applications. This MOSFET is suitable to perform switching operations with low-voltage operations as it is able to switch low RDS(on) MOSFET operations with a single pulse drive. Moreover, with its thermal resistant properties, the device is suitable to be used in high-temperature environments. For example, direct power converters like EMI filters, hard drives, and motors in applications such as warmer engines, automotive AC systems, light sensors, or various power circuit protection.

Working Principle

MOSFETs are transistors that use the conducting channel of a semiconductor in order to make or break a connection between the source and drain leads. The working principle of PSMN7R5-30MLDX is based on the enhancement mode working principle. The Gate terminal of the MOSFET creates an electric field in which the flow of electrons between the source and the drain is then determined by the voltage applied to the gate terminal. Depending on the voltage applied to the gate, the electrons can either be blocked from passing through the semiconductor material or they can be allowed to pass freely. The flow of electrons is primarily determined by the amount of electric field generated by the Gate terminal, so with a suitable voltage applied to the gate, a low RDS(on) current can be selected and it can be controlled with a single pulse drive. The PSMN7R5-30MLDX has a higher degree of thermal resistivity than many other enhancement mode MOSFETs due to its gate design which enables the device to operate in temperatures of up to +150 °C and still remain stable in terms of leakage current.

Conclusion

The PSMN7R5-30MLDX is a 30 milliamp N-channel enhancement mode MOSFET. It is mainly used in amplifiers, voltage regulators, and other small power switching applications. This MOSFET is especially suited for low-voltage operations, and the combination of its enhanced working principle and thermal resistant properties allows it to be used in high-temperature applications. The device is capable of switching low RDS(on) MOSFET operations with a single pulse drive and maintain stability in terms of leakage current even in extreme temperatures.

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