PSMN7R5-60YLX

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• PSMN7R5-60YLX Application Field and Working Principle

PSMN7R5-60YLX is a N-channel enhancement mode MOSFET (Metal–Oxide–Semiconductor Field Effect Transistor) manufactured by Infineon Technologies. This power MOSFET series is designed and manufactured for efficient, reliable and easy to implement solutions for the power switch needs of the industrial and communications systems applications. The PSMN7R5-60YLX is housed in a TO-247 package, and is rated for a maximum operating temperature of 150°C, a maximum power dissipation of 65W, and a maximum drain-source voltage of 600V.

In an N-channel enhancement mode MOSFET, the gate and channel are isolated from each other, and are usually connected to a positive voltage source (the power supply), with one terminal also connected to the drain region. The functioning of the MOSFET relies heavily on the gate-source voltage: when increased, the current begins to flow through the channel between the source and drain regions, allowing the diode to be switched on and off. This is made possible due to the voltage-controlled gate, which leads to the MOSFET being able to work as an amplifier, allowing precise control of currents passing between its different terminals.

The PSMN7R5-60YLX MOSFET is particularly suited for applications such as inrush current limiters, DC-DC converters, variable speed motors, and uninterruptible power supplies (UPS). It is also used in ultra low voltage power supply systems, power factor correction (PFC) solutions and portable loudspeakers, as well as for switching in audio amplifiers. With its high current capacity and low on-state resistance, it is proven to be one of the best solutions available in the market for demanding industrial and communications applications.

In summary, the PSMN7R5-60YLX is an N-channel enhancement mode MOSFET, which is highly appreciated for its versatility, reliability, and efficiency. It is suitable for a wide range of industrial and communications applications and offers impressive performance levels due to its low on-state resistance and high current carrying capacity. It is housed in a TO-247 package and can withstand maximum operating temperatures of 150°C and a maximum drain-source voltage of 600V.

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