SI1467DH-T1-E3

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The SI1467DH-T1-E3 is an N-channel silicon planar junction MOSFET made with advanced power semiconductor technology. This device is offered in space-saving small SOP-8 packages, providing high breakdown voltage and low on-resistance in a small 3 mm2 area. This MOSFET can be used for many applications, particularly high-speed switching applications and low-side switch in power systems.

Application Field

The SI1467DH-T1-E3 MOSFET is suitable for medium- and high-voltage switching applications with high efficiency, such as Integrated DC/DC converters, lighting, brushless DC motor drives, power line communications, and Smart Metering applications. It is also useful in all kinds of consumer electronics, automotive, and industrial switchboards.

Working Principle of MOSFETs

MOSFETs are a kind of field-effect transistor (FET) wherein the gate electrode, the source electrode, and the drain electrode are separated by an insulating layer made of silicon dioxide. When a small voltage between the gate and source electrodes is applied, a conducting channel is generated between the source and the drain. This conducting channel is called the depletion region, and it is formed when the depletion region at the substrate side of the gate is extended to be in contact with the drain.

In a MOSFET, the gate is insulated from the channel by an insulator layer, or gate oxide, and by applying a gate voltage (Vgs) the depletion region can be modulated. This modulation results in the change of the effective resistance between the source and the drain (Rds). By modulating the resistance with the gate voltage, MOSFETs can be used to produce the desired switching characteristics at low currents.

When applying a positive voltage to the gate, the MOSFET turns ON. As the voltage increases, the ON resistance decreases, allowing higher currents to pass through the MOSFET. When the gate voltage is reduced to zero, the MOSFET turns OFF.

Features and Benefits of the SI1467DH-T1-E3 MOSFET

The SI1467DH-T1-E3 MOSFET offers a number of benefits for high speed switching and low-side switch applications. It has a low on-resistance of 55 mΩ, making it suitable for high-efficiency applications, as well as comprehensive protection features such as over-temperature protection, over-voltage protection, and short-circuit protection.

This device also provides a high-temperature operation up to a maximum junction temperature of 175°C and a maximum total power dissipation of 3.2W, which is ideal for applications that require high accuracy and long-term stability. In addition, it has excellent switching performance, providing both fast turn-on and fast turn-off times.

The SI1467DH-T1-E3 MOSFET is a reliable device that is easy to use and provides superior performance for many high-speed switching and low-side switch applications. It is available in a space-saving small SOP-8 package, allowing a small area of 3mm2 saving while keeping a high breakdown voltage of 600V. This makes the MOSFET ideal for high reliability as well as high speed switching applications.

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