Allicdata Part #: | SI4830ADY-T1-E3TR-ND |
Manufacturer Part#: |
SI4830ADY-T1-E3 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Siliconix |
Short Description: | MOSFET 2N-CH 30V 5.7A 8-SOIC |
More Detail: | Mosfet Array 2 N-Channel (Half Bridge) 30V 5.7A 1.... |
DataSheet: | SI4830ADY-T1-E3 Datasheet/PDF |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | 3V @ 250µA |
Base Part Number: | SI4830 |
Supplier Device Package: | 8-SO |
Package / Case: | 8-SOIC (0.154", 3.90mm Width) |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power - Max: | 1.1W |
Input Capacitance (Ciss) (Max) @ Vds: | -- |
Gate Charge (Qg) (Max) @ Vgs: | 11nC @ 4.5V |
Series: | LITTLE FOOT® |
Rds On (Max) @ Id, Vgs: | 22 mOhm @ 7.5A, 10V |
Current - Continuous Drain (Id) @ 25°C: | 5.7A |
Drain to Source Voltage (Vdss): | 30V |
FET Feature: | Logic Level Gate |
FET Type: | 2 N-Channel (Half Bridge) |
Part Status: | Obsolete |
Packaging: | Tape & Reel (TR) |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
The SI4830ADY-T1-E3 is a three-terminal electro-static discharge (ESD) circuit protection device with a break-before-make contact structure. It is designed to protect vulnerable ESD sensitive devices such as high-speed processors, memory, circuit boards and other digital systems. It is very useful when dealing with ESD-related problems, due to the low resistance and high capacitance of its dynamic solution. The SI4830ADY-T1-E3 is part of an array of other similar ESD protection devices from Vishay, aimed at preventing such electrical transients from occurring.
The SI4830ADY-T1-E3 is an array ESD protection device composed of multiple trenches, each with 0.8 micron lithography process. These trenches are filled with a P-type substrate, and there are three n-type implant branches, making up the N-channel MOSFET array. This helps to reduce parasitic gate-source capacitance and provide a wider current path. It also helps to reduce the delay of the device, allowing it to protect against faster transients.
The SI4830ADY-T1-E3 is typically used in commercial and automotive applications, where the need to protect ESD sensitive circuits is of absolute importance. The benefits of the device include a low turn-off threshold voltage, small size, and low on-resistance. It is also designed to survive an ESD surge without damage, providing reliable protection to the system.
In terms of the working principle of the SI4830ADY-T1-E3, it works as an independent on/off switch for ESD events. It has two characteristics; a threshold voltage, also known as V t , which determines the triggering of the protection system, and a voltage rating, also known as V r , which determines how much voltage it can withstand. When the voltage exceeds the V t , the device will activate, resulting in an immediate and continuous conduction, which limits the current passing through the circuit, protecting it from damage.
Through this mechanism, the SI4830ADY-T1-E3 can effectively and reliably protect circuitry from ESD events. Its small size, low dissipation, and excellent ESD protection capability make it an appealing solution for designers who require ESD protection in their products and circuitry.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
---|
SI4825DY-T1-GE3 | Vishay Silic... | 0.0 $ | 1000 | MOSFET P-CH 30V 8.1A 8-SO... |
SI4836DY-T1-E3 | Vishay Silic... | -- | 1000 | MOSFET N-CH 12V 17A 8-SOI... |
SI4860DY-T1-E3 | Vishay Silic... | -- | 1000 | MOSFET N-CH 30V 11A 8-SOI... |
SI4888DY-T1-E3 | Vishay Silic... | -- | 1000 | MOSFET N-CH 30V 11A 8-SOI... |
SI4831BDY-T1-E3 | Vishay Silic... | 0.0 $ | 1000 | MOSFET P-CH 30V 6.6A 8-SO... |
SI4831BDY-T1-GE3 | Vishay Silic... | 0.0 $ | 1000 | MOSFET P-CH 30V 6.6A 8-SO... |
SI4833ADY-T1-GE3 | Vishay Silic... | 0.0 $ | 1000 | MOSFET P-CH 30V 4.6A 8-SO... |
SI4836DY-T1-GE3 | Vishay Silic... | -- | 1000 | MOSFET N-CH 12V 17A 8-SOI... |
SI4840DY-T1-GE3 | Vishay Silic... | -- | 1000 | MOSFET N-CH 40V 10A 8-SOI... |
SI4850EY-T1 | Vishay Silic... | -- | 1000 | MOSFET N-CH 60V 6A 8-SOIC... |
SI4858DY-T1-E3 | Vishay Silic... | -- | 1000 | MOSFET N-CH 30V 13A 8-SOI... |
SI4858DY-T1-GE3 | Vishay Silic... | -- | 1000 | MOSFET N-CH 30V 13A 8-SOI... |
SI4860DY-T1-GE3 | Vishay Silic... | 0.0 $ | 1000 | MOSFET N-CH 30V 11A 8-SOI... |
SI4876DY-T1-GE3 | Vishay Silic... | 0.0 $ | 1000 | MOSFET N-CH 20V 14A 8-SOI... |
SI4880DY-T1-E3 | Vishay Silic... | -- | 1000 | MOSFET N-CH 30V 13A 8-SOI... |
SI4880DY-T1-GE3 | Vishay Silic... | 0.0 $ | 1000 | MOSFET N-CH 30V 13A 8-SOI... |
SI4886DY-T1-E3 | Vishay Silic... | -- | 1000 | MOSFET N-CH 30V 9.5A 8-SO... |
SI4886DY-T1-GE3 | Vishay Silic... | 0.0 $ | 1000 | MOSFET N-CH 30V 9.5A 8-SO... |
SI4888DY-T1-GE3 | Vishay Silic... | 0.0 $ | 1000 | MOSFET N-CH 30V 11A 8-SOI... |
SI4892DY-T1-E3 | Vishay Silic... | -- | 1000 | MOSFET N-CH 30V 8.8A 8-SO... |
SI4892DY-T1-GE3 | Vishay Silic... | 0.0 $ | 1000 | MOSFET N-CH 30V 8.8A 8-SO... |
SI4825DY-T1-E3 | Vishay Silic... | -- | 1000 | MOSFET P-CH 30V 8.1A 8-SO... |
SI4831DY-T1-E3 | Vishay Silic... | -- | 1000 | MOSFET P-CH 30V 5A 8-SOIC... |
SI4833ADY-T1-E3 | Vishay Silic... | -- | 1000 | MOSFET P-CH 30V 4.6A 8-SO... |
SI4835BDY-T1-E3 | Vishay Silic... | -- | 1000 | MOSFET P-CH 30V 7.4A 8-SO... |
SI4840DY-T1-E3 | Vishay Silic... | -- | 4111 | MOSFET N-CH 40V 10A 8-SOI... |
SI4845DY-T1-E3 | Vishay Silic... | -- | 1000 | MOSFET P-CH 20V 2.7A 8-SO... |
SI4876DY-T1-E3 | Vishay Silic... | -- | 1000 | MOSFET N-CH 20V 14A 8-SOI... |
SI4850BDY-T1-GE3 | Vishay Silic... | 0.32 $ | 1000 | MOSFET N-CH 60V SO-8N-Cha... |
SI4804BDY-T1-E3 | Vishay Silic... | -- | 1000 | MOSFET 2N-CH 30V 5.7A 8-S... |
SI4830ADY-T1-E3 | Vishay Silic... | -- | 1000 | MOSFET 2N-CH 30V 5.7A 8-S... |
SI4834BDY-T1-E3 | Vishay Silic... | -- | 1000 | MOSFET 2N-CH 30V 5.7A 8-S... |
SI4838DY-T1-E3 | Vishay Silic... | -- | 1000 | MOSFET N-CH 12V 17A 8-SOI... |
SI4890DY-T1-E3 | Vishay Silic... | -- | 1000 | MOSFET N-CH 30V 11A 8-SOI... |
SI4842BDY-T1-GE3 | Vishay Silic... | -- | 2500 | MOSFET N-CH 30V 28A 8-SOI... |
SI4825DDY-T1-GE3 | Vishay Silic... | -- | 1000 | MOSFET P-CH 30V 14.9A 8SO... |
SI4866BDY-T1-GE3 | Vishay Silic... | -- | 1000 | MOSFET N-CH 12V 21.5A 8-S... |
SI4850EY-T1-E3 | Vishay Silic... | -- | 1000 | MOSFET N-CH 60V 6A 8-SOIC... |
SI4850EY-T1-GE3 | Vishay Silic... | -- | 1000 | MOSFET N-CH 60V 6A 8-SOIC... |
SI4896DY-T1-E3 | Vishay Silic... | -- | 1000 | MOSFET N-CH 80V 6.7A 8-SO... |
MOSFET 2N-CH 30V 8AMosfet Array 2 N-Chan...
MOSFET 2N-CH 40V 6A 8PWRPAKMosfet Array ...
MOSFET 2P-CH 30V 5.8A 8SOICMosfet Array ...
MOSFET 2N-CH 80V 1.1A 8SOICMosfet Array ...
MOSFET 2N-CH 56LFPAKMosfet Array
MOSFET 2N-CH 30V 8SOICMosfet Array 2 N-C...