SI4836DY-T1-GE3 Allicdata Electronics
Allicdata Part #:

SI4836DY-T1-GE3-ND

Manufacturer Part#:

SI4836DY-T1-GE3

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Vishay Siliconix
Short Description: MOSFET N-CH 12V 17A 8-SOIC
More Detail: N-Channel 12V 17A (Ta) 1.6W (Ta) Surface Mount 8-S...
DataSheet: SI4836DY-T1-GE3 datasheetSI4836DY-T1-GE3 Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Vgs(th) (Max) @ Id: 400mV @ 250µA (Min)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 1.6W (Ta)
FET Feature: --
Vgs (Max): ±8V
Gate Charge (Qg) (Max) @ Vgs: 75nC @ 4.5V
Series: TrenchFET®
Rds On (Max) @ Id, Vgs: 3 mOhm @ 25A, 4.5V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Current - Continuous Drain (Id) @ 25°C: 17A (Ta)
Drain to Source Voltage (Vdss): 12V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Tape & Reel (TR) 
Description

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The SI4836DY-T1-GE3 is a high-performance, low-voltage, single N-Channel, Enhancement Mode Field Effect Transistor (FET). It is designed to provide high switching performance in both load switches and synchronous rectifier applications. It features an on resistance of less than 10 ohms, a VDSS rating of 5.5V, a fast (5ns) turn-on and turn-off times and an exceptionally low gate charge of 1.5nC. This makes it ideal for applications where low voltage, fast switching and high-current drive capabilities are required.

The SI4836DY-T1-GE3 is built using advanced processing technology and is built on a planar-gate architecture with a high-speed switching MOSFET chip as its main component. This architecture helps reduce switch on resistance and increases the device\'s noise immunity. It also helps reduce switching losses and increases the efficiency of the device.

The SI4836DY-T1-GE3 is typically used as a load switch in power management circuits, as a bypass switch and for noise suppression. It can also be used in synchronous rectifier circuits for the conversion and regulation of voltage and current.

The SI4836DY-T1-GE3 operates on the principle of enhancement mode Field Effect Transistor (FET). Basically, it works as a switch that uses an electric field to control the flow of electron current. When a voltage is applied to the gate of the FET, it creates an electric field that attracts electrons, allowing current to flow from the source to the drain. The higher the voltage applied to the gate, the higher the amount of electron flow allowed.

In terms of its application field, the SI4836DY-T1-GE3 is suitable for use in various power management circuits. It can be used as an on/off switch in battery- operated equipment, and as a synchronous rectifier in wide input voltage applications such as telecom, server and high-end consumer applications. Other applications include high-current load switches, boost converters, automotive load switches and synchronous rectifiers, power fold-back and surge protection.

The SI4836DY-T1-GE3 is an excellent choice for power management designs that require high-speed switching and low on-resistance. Its high performance and low switching losses are ideal for providing efficient, cost-effective power solutions.

The specific data is subject to PDF, and the above content is for reference

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