SI4858DY-T1-E3

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The SI4858DY-T1-E3 is a feature-rich N-channel MOSFET, making it an ideal choice for applications requiring high power handling, fast switching and under voltage lockout. This device’s superior performance, low on-state resistance (Rdson) and ultra-low leakage make it a smart choice for applications that require ultra-low power consumption or high current handling.

Applications

• AC/DC Converters
• High Frequency Switching/DC-DC Converters
• Inverters
• Motor Drives
• Power Supplies

Features

• Low on-state resistance (Rds (on))
• High current capability
• Superior junction temperature operation
• Low gate charge
• Improved Gate Threshold Voltage (Vgs (th))
• Soft switching capability
• Under voltage lockout

Working Principle

The SI4858DY-T1-E3 is based on Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET) Technology. A MOSFET is an active semiconductor device used as switching elements in many electronics applications. The working of MOSFETs is based on a simple principle - when a voltage is applied across the two gate terminals, a conducting layer called the channel is formed in the MOSFET, enabling current flow from the source to the drain. If the voltage is increased beyond certain threshold, the channel closes and therefore the current is blocked.

The SI4858DY-T1-E3 MOSFET also includes an on-chip under voltage lockout. This protects the MOSFET from damage caused by over-voltage condition and ensures efficient operation regardless of the operating voltage. The under voltage lockout protects both the FET and the switching circuit, thus preventing the switching circuit from being exposed to overvoltages.

In addition, the on-chip soft switching capability of the SI4858DY-T1-E3 prevents excessive current spikes in the circuit and also reduces noise emitted by the switching operation. This ensures that the switching operation is smooth and efficient.

The SI4858DY-T1-E3 with its low on-state resistance (Rds(on)) and high current handling capabilities makes it an ideal choice for applications requiring high power handling, fast switching and under voltage lockout.

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