SI4825DY-T1-GE3 Allicdata Electronics
Allicdata Part #:

SI4825DY-T1-GE3TR-ND

Manufacturer Part#:

SI4825DY-T1-GE3

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Vishay Siliconix
Short Description: MOSFET P-CH 30V 8.1A 8-SOIC
More Detail: P-Channel 30V 8.1A (Ta) 1.5W (Ta) Surface Mount 8-...
DataSheet: SI4825DY-T1-GE3 datasheetSI4825DY-T1-GE3 Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Vgs(th) (Max) @ Id: 3V @ 250µA
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 1.5W (Ta)
FET Feature: --
Vgs (Max): ±25V
Gate Charge (Qg) (Max) @ Vgs: 71nC @ 10V
Series: TrenchFET®
Rds On (Max) @ Id, Vgs: 14 mOhm @ 11.5A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 8.1A (Ta)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Obsolete
Packaging: Tape & Reel (TR) 
Description

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The SI4825DY-T1-GE3 is a type of transistor that falls into the FETs and MOSFETs categories and is specifically a single type transistor. As with all transistors, it is a semiconductor device that works by controlling current flow with the use of an electric field. This particular device is used in a wide range of electronic applications to serve as an amplifier, oscillator, switch, which allows it to be used in a variety of different circuits.

The SI4825DY-T1-GE3 can be used in a variety of different applications from power management to signal conditioning, and it is ideal for use in applications requiring high speed and low noise operation. Its layout and design allows for minimal power consumption and improved reliability, making it a great option for many different projects.

This type of transistor is one of the most commonly used types of transistors available today and is often preferred because of its affordability. It is a relatively inexpensive component to purchase, meaning it is perfect for use in low-cost electronics projects.

At the core of the SI4825DY-T1-GE3 is its working principle, which is based on the MOSFET (metal-oxide-semiconductor field-effect transistor) type of transistor. This type of device has a gate electrode that is responsible for controlling the flow of current through it. When a current is passed through the gate electrode of the transistor, the electric field between it and the drain terminal becomes altered, allowing a certain amount of current to flow through. The amount of current that can flow through is determined by the size and type of transistor chosen as well as the voltage applied to the gate electrode.

The SI4825DY-T1-GE3 is an ideal transistor for a range of electronics projects, from robotics and lighting applications to power management projects. Its low cost and reliable performance make it a great choice for many different applications. In addition, its working principle and design make it extremely easy to use and integrate into any circuit. The SI4825DY-T1-GE3 is one of the most commonly used transistors available today and can be a great addition to any circuit design.

The specific data is subject to PDF, and the above content is for reference

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