SI4890DY-T1-E3 Discrete Semiconductor Products

Vgs(th) (Max) @ Id:	800mV @ 250µA (Min)
Package / Case:	8-SOIC (0.154", 3.90mm Width)
Supplier Device Package:	8-SO
Mounting Type:	Surface Mount
Operating Temperature:	-55°C ~ 150°C (TJ)
Power Dissipation (Max):	2.5W (Ta)
FET Feature:	--
Vgs (Max):	±25V
Gate Charge (Qg) (Max) @ Vgs:	20nC @ 5V
Series:	TrenchFET®
Rds On (Max) @ Id, Vgs:	12 mOhm @ 11A, 10V
Drive Voltage (Max Rds On, Min Rds On):	4.5V, 10V
Current - Continuous Drain (Id) @ 25°C:	--
Drain to Source Voltage (Vdss):	30V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Active
Packaging:	Tape & Reel (TR)

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<p>The SI4890DY-T1-E3 is a standard N-Channel enhancement-mode Field Effect Transistor (FET) which has been designed to provide a low on-resistance over a wide range of high current operation. It is housed in a low voltage, low power package and is offered with a wide selection of options for nearly any application requiring power MOSFETs. This article provides an in-depth overview of the SI4890DY-T1-E3 including its applications, working principle, and characteristics.</p><h2>Applications</h2><p>The SI4890DY-T1-E3 is designed for a variety of applications including DC-DC converters, high frequency switching, and power distribution. It is used in a variety of industrial, telecom, and medical products, as well as automotive applications. It also is used as an efficient switch in lighting products such as LED lighting. </p><p>The SI4890DY-T1-E3 offers a low on-resistance at high voltages and low power, making it an excellent choice for power distribution systems, automotive applications, and solar converters. The device features a low gate charge and low gate resistance for improved efficiency. The device is designed for a gate-source voltage range of 2V to 6V and a maximum drain current of 160A making it suitable for applications requiring high power switching.</p><h2>Working Principle</h2><p>The SI4890DY-T1-E3 is an N-channel FET, which uses the principle of electrostatic control for its operation. The device consists of an insulated gate field effect structure placed within a semiconductor material, typically silicon. When an adequate source of voltage is applied to the gate, electrons are either attracted or repelled. This changed electron distribution generates an electric field which allows current to pass through the "channel", resulting in conduction. </p><p>When the applied gate voltage is more negative than "threshold" voltage, which is the FET\'s turn-on voltage, the conduction is reduced. This allows the device to be used as an effective switch in many applications. The SI4890DY-T1-E3 features a low turn-on and turn-off time. This allows for fast switching for improved system efficiency.</p><h2>Characteristics</h2><p>The SI4890DY-T1-E3 offers a variety of parameters for improved efficiency and power handling. The device has a maximum drain current of 160A at a 25°C ambient temperature and a maximum drain-source voltage of 30V. It is rated for an on-resistance of 165mΩ and a threshold voltage of 2.0V.</p><p>The SI4890DY-T1-E3 also features a low gate-source charge of 250pC and a gate-source resistance of 5Ω. These features work together to reduce the switching time, decrease power dissipation and increase efficiency. Furthermore, the device is available in a variety of packages including TO-220, TO-220FP, and various others, making it ideal for a variety of applications.</p><p>The SI4890DY-T1-E3 is also designed for use in applications requiring a wide temperature range. It is rated for an extended temperature range (-55°C to 175°C) and is designed for use in harsh industrial environments. Additionally, the device is designed for use in wide-bandgap applications, making it suitable for applications requiring a higher breakdown voltage.</p><p>In conclusion, the SI4890DY-T1-E3 is a highly reliable and efficient N-Channel FET. It is rated for a low on-resistance of 165mΩ, a maximum current of 160A, and an extended temperature range of -55°C to 175°C. It is suited for a variety of applications including DC-DC converters, high frequency switching, and power distribution. Additionally, the device is available in a wide variety of packages and is ideal for a number of industrial, telecom, and medical applications.</p>

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