Allicdata Part #: | SI4886DY-T1-GE3-ND |
Manufacturer Part#: |
SI4886DY-T1-GE3 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Siliconix |
Short Description: | MOSFET N-CH 30V 9.5A 8-SOIC |
More Detail: | N-Channel 30V 9.5A (Ta) 1.56W (Ta) Surface Mount 8... |
DataSheet: | SI4886DY-T1-GE3 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 800mV @ 250µA (Min) |
Package / Case: | 8-SOIC (0.154", 3.90mm Width) |
Supplier Device Package: | 8-SO |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 1.56W (Ta) |
FET Feature: | -- |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 20nC @ 5V |
Series: | TrenchFET® |
Rds On (Max) @ Id, Vgs: | 10 mOhm @ 13A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 9.5A (Ta) |
Drain to Source Voltage (Vdss): | 30V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tape & Reel (TR) |
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The SI4886DY-T1-GE3 is a single, 40V N-Channel MOSFET featuring high performance in both switching and linear operation. It is part of the family of transistor products manufactured by Vishay Intertechnology, a leading supplier of discrete semiconductors and electronic components. This MOSFET product is designed to provide very low on-state resistance and superior switching performance in a variety of voltage and current applications.
The SI4886DY-T1-GE3 is a power transistor and is suitable for use in audio amplifier circuits, digital electronic circuits and general power electronic circuits. It is used to amplify and switch high power signals. The device is a three-terminal metal oxide semiconductor field-effect transistor (MOSFET) and is available in both through-hole and surface mount packaging. The device is made of a silicon substrate and metal oxide gate, which can be used to control the on-state resistance. The device has a 40V drain-source rating, a 0.0021Ω on-resistance rating and a maximum gate-source voltage rating of 15V.
When the voltage at the gate pin is low, no current flows between source and drain and the MOSFET is in its off-state. When the voltage at the gate pin is high, current flows easily between source and drain and the MOSFET is in its on-state. The SI4886DY-T1-GE3 has a low gate-source capacitance of 6.6pF, which makes it well-suited for low-noise, high-speed switching applications. The device also offers fast switching performance, making it suitable for high-frequency applications. It has a maximum operating temperature range of -55°C to 150°C.
The SI4886DY-T1-GE3 is used extensively in the following applications:
- DC-DC converters
- Inverters
- Small signal amplifiers
- Motor control
- General industrial electronics
The SI4886DY-T1-GE3 is an easy-to-use device and requires minimal support circuitry such as a resistor drive circuit. It is important to connect the source pin to a proper circuit ground and the gate pin to a resistor connected to the control source. The drain pin can be connected to the load and the various application circuits specified for the device.
In conclusion, the SI4886DY-T1-GE3 is an excellent choice for power switching and amplification applications, particularly for small and medium-sized loads. The device provides a low overall on-state resistance, fast switching speed and excellent temperature stability, making it an ideal choice for budget-friendly and reliable power applications.
The specific data is subject to PDF, and the above content is for reference
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