SI4888DY-T1-E3

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The SI4888DY-T1-E3 is an advanced, ultra-low on-resistance MOSFET transistor developed by Vishay/Siliconix. This highly optimized device is excellent for applications requiring low on-resistance and low gate charge. The device is also particularly suitable for designs where voltage and power level efficiency are important.

The SI4888DY-T1-E3 is a single-Vth, 125V N-channel enhancement mode MOSFET. It is designed to operate in a wide temperature range, from -55C to +175C. This device offers very low RDS (on) values, making it suitable for high frequency switching applications.

The SI4888DY-T1-E3 is primarily used in power management and in motor controls. It is a low-cost, low-on resistance device, making it a suitable alternative to conventional IGBTs and MOSFETs.

The electrical properties of the SI4888DY-T1-E3 include a drain-source breakdown voltage of 125V, an input capacitance of 20pF, and a gate-source breakdown voltage of 5V. The device also has a maximum current rating of 10A and an on-resistance of 0.5 ohm. The key features of this device are its low-on resistance and low gate charge.

The working principle of the SI4888DY-T1-E3 is quite simple. When a voltage is applied to the gate of the device, the depletion region between the drain and source terminals widens, thereby allowing electrons to flow from the source to the drain. This current flow is called the drain current, and it is controlled by the gate voltage. This is the principle by which the device operates.

The SI4888DY-T1-E3 is a very versatile device, and can be used for a variety of applications such as DC/DC converters, synchronous rectifiers, PFC circuits, and motor drives. Its low on-resistance, low gate charge, and wide temperature range make it an ideal choice for various power management and motor control applications.

In conclusion, the SI4888DY-T1-E3 is a highly optimized device with superior performance, as well as very low on-resistance and low gate charge. It is primarily suitable for use in power management and motor control applications. This device provides excellent performance in a wide range of operating conditions, and is a cost-effective alternative to conventional IGBTs and MOSFETs.

The specific data is subject to PDF, and the above content is for reference