SI4831BDY-T1-E3

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The SI4831BDY-T1-E3 is a low drop-out (LDO) voltage regulator that operates with an input voltage from 3V to 18V, providing a steady output voltage with stable operation as low as 0.6V. It is one of numerous products which belong to the group of field-effect transistors (FETs), also known as MOSFETs. These transistors are a particularly popular choice because of their low power consumption and the incredibly small packages that they occupy.

A FET is a type of transistor that is made up of a semiconductor material with a “source”, a “gate” and a “drain”. It works by controlling the current flow between the source and the drain by controlling the voltage at the gate. The SI4831BDY-T1-E3 is a single channel, N-channel depletion mode MOSFETs. This means that the source and drain are connected, and the gate is used to enable current flow from source to drain when a positive voltage is applied to the gate. This makes it an ideal product for applications where a low voltage dropout voltage is required, such as in regulators.

The main application field for the SI4831BDY-T1-E3 is as an LDO regulator for low voltage applications such as processors, memory modules, flash memory and other applications with similar requirements. It has an extremely low quiescent supply current of 6.7uA and a maximum output current capability of 0.8A, making it suitable for a wide range of applications. The low dropout voltage makes it a viable choice for supplying voltage to the low power consuming components, while the high output current make it a good choice for powering more demanding circuitry.

The SI4831BDY-T1-E3 is a single P-channel depletion mode MOSFET that works on the principle of field-effect control. This means that the transistors can be controlled by applying a voltage signal to the gate in order to regulate the current flow between the source and the drain. The channel is closed when the gate voltage is at 0V, and opens when the gate voltage is greater than 0V. Due to its depletion mode design, it can be used in both synchronous and asynchronous circuits without the need for any external components.

The excellent performance of the SI4831BDY-T1-E3 makes it a popular choice for multiple applications, ranging from low power line regulation to driving output stages for portable devices. It is a reliable and cost-effective solution for applications where a high load current is required, combined with a low dropout voltage.

In conclusion, the SI4831BDY-T1-E3 is a single P-channel depletion mode MOSFET that offers a low dropout voltage combined with a high output current capability and an extremely low quiescent supply current. Its low voltage dropout allows it to be used in a wide range of low power applications, such as processors, memory modules, and flash memory. It is reliable, cost-effective and easy to use, making it a popular choice for multiple circuit designs.

The specific data is subject to PDF, and the above content is for reference