SI4840DY-T1-E3

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The SI4840DY-T1-E3 are an N-channel enhancement-mode field-effect transistors (MOSFET) with ultra-low off-state current and low on-state resistance. It combines high-performance and a wide range of packaging options, making it applicable in numerous consumer, industrial and automotive applications. This device can operate at higher frequencies, making it useful for optimal power management in audio circuits, overvoltage protection circuits, gate drivers, DC/DC converters, consumer electronics, appliances, and industrial & automotive applications.

The SI4840DY-T1-E3 has a drain-source breakdown voltage of 350V and a pulsed drain current of 70A making it suitable for heavy-duty applications. It is provided with higher thermal resistance and higher junction temperature ratings when compared to its other variants. The SI4840DY-T1-E3 also has a wide range of operating temperature with a maximum of 150°C. Additionally, these devices come in a 16- through 28-Lead PG-DSOJ-P package with a small foot print and visible die.

The working principle of the SI4840DY-T1-E3 is based on three effects. Firstly, the drain-source field-effect transistor is controlled through applying a gate voltage. As the gate-source voltage is increased, the resistance between drain and source falls exponentially. This effect of resistance control is known as the Channel Enhancement. Secondly, the device protects itself against reverse bias. A low gate-source voltage creates an off-state, suppressing the current flow in the reverse direction. Finally, the device is able to self-regulate a constant drain current over a wide range of drain-source voltages. This effect is known as the Ideal Diode Characteristic.

In addition to its ultra-low off-state current and low on-state resistance, the SI4840DY-T1-E3 also has a low threshold voltage and fast switching characteristics, making it ideal for applications such as load switches, DC/DC converters, audio power amplifiers, audio circuits and overvoltage protection. It also minimizes power loss, improves reliability and provides higher efficiency in audio and power management applications. The SI4840DY-T1-E3 is suitable for industrial, automotive and consumer applications.

To summarize, the SI4840DY-T1-E3 has many advantages that make it useful for a variety of applications. It provides an ultra-low off-state current and low on-state resistance, high-performance and a wide range of packaging options. It is suitable for higher frequency operations and applications such as audio circuits, overvoltage protection, DC/DC converters, load switches and audio power amplifiers. Additionally, it provides higher thermal resistance and higher junction temperature ratings, making it suitable for application in various harsh environments. The SI4840DY-T1-E3 is a versatile and reliable device that can be used in many different applications in the consumer, industrial and automotive industries.

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