| Allicdata Part #: | SI5406DC-T1-E3TR-ND |
| Manufacturer Part#: |
SI5406DC-T1-E3 |
| Price: | $ 0.00 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Vishay Siliconix |
| Short Description: | MOSFET N-CH 12V 6.9A 1206-8 |
| More Detail: | N-Channel 12V 6.9A (Ta) 1.3W (Ta) Surface Mount 12... |
| DataSheet: |  SI5406DC-T1-E3 Datasheet/PDF |
| Quantity: | 1000 |
Specifications
| Vgs(th) (Max) @ Id: | 600mV @ 1.2mA (Min) |
| Package / Case: | 8-SMD, Flat Lead |
| Supplier Device Package: | 1206-8 ChipFET™ |
| Mounting Type: | Surface Mount |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Power Dissipation (Max): | 1.3W (Ta) |
| FET Feature: | -- |
| Vgs (Max): | ±8V |
| Gate Charge (Qg) (Max) @ Vgs: | 20nC @ 4.5V |
| Series: | TrenchFET® |
| Rds On (Max) @ Id, Vgs: | 20 mOhm @ 6.9A, 4.5V |
| Drive Voltage (Max Rds On, Min Rds On): | 2.5V, 4.5V |
| Current - Continuous Drain (Id) @ 25°C: | 6.9A (Ta) |
| Drain to Source Voltage (Vdss): | 12V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | N-Channel |
| Part Status: | Obsolete |
| Packaging: | Tape & Reel (TR) |
Description
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The SI5406DC-T1-E3 is a single high-speed MOSFET in a small-footprint profile, making it an efficient power supply design solution. It is a high-voltage MOSFET with a low Rds on-state resistance, allowing for higher current and power efficiency. Additionally, the device can be easily integrated into a variety of power management and higher-level system applications.The SI5406DC-T1-E3 is a modern MOSFET technology with a significant improvement in performance, compared to traditional MOSFETs. It has the capability to operate at extremely high speeds with a low Rds on-state resistance and low gate-charge. As a result, it has the ability to efficiently switch large amounts of power, making it ideal for a variety of high-power applications. Additionally, the device is designed with a low gate-voltage that allows for efficient operation of the MOSFET.The SI5406DC-T1-E3 is designed to target application fields such as DC-DC converters, switch-mode power supplies (SMPSs), motor drivers, high-voltage applications, and power distribution switches for communications and networking systems. The device operates as a switch in these applications and can handle both high- and low-side motor control and power delivery with a single MOSFET device. Additionally, the device can be easily integrated into the design, reducing cost and complexity.The SI5406DC-T1-E3 offers a wide range of gate voltages, from 5V to 25V. This allows for a variety of applications, from low- to high-end designs. Additionally, the device also features a low gate resistance and low on-state resistance, allowing for efficient operation of the device.In order to achieve the best results, the SI5406DC-T1-E3 should be used in conjunction with a driver circuit. This will ensure that the user can control the on/off state of the gate and can minimize losses due to switching.The working principle of the SI5406DC-T1-E3 is based on the efficient transfer of power from the gate to the drain. When a voltage is applied to the gate, the current will start to flow through the device. This will create a magnetic field, which will cause electrons to move from the source to the drain. The flow of electrons causes current to flow from the source to the drain, effectively transferring power from the gate to the drain. The MOSFET then regulates the amount of current that flows between the source and the drain, thereby controlling the switching of power.The SI5406DC-T1-E3 is an efficient, high-speed MOSFET with low on-state resistance, allowing for higher current and power efficiency. It is an excellent choice for use in DC-DC converters, SMPSs, motor drivers, and high-voltage applications. In addition, its relatively low gate voltage, low gate resistance, and low on-state resistance enable it to provide efficient operation with minimal losses.
The specific data is subject to PDF, and the above content is for reference
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