SI5443DC-T1-GE3

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The SI5443DC-T1-GE3 is a high-current, high-capability single-channel n-channel enhancement mode power MOSFET with a current capability of 266 A at a gate-to-source voltage of 10 V. It has a breakdown voltage of 200 V and a channel operating temperature range of -55 °C to +150 °C. This MOSFET is designed to operate in high-frequency, high-temperature environments, making it well-suited for automotive and industrial electronics. The MOSFET is manufactured in a 10 pin TO-247 package and can be used in both TO-220 and TO-263 assemblies.

SI5443DC-T1-GE3 is a high-performanace, robust MOSFET used in various applications such as automotive and industrial electronics, power modules and power management. It is a powerful and reliable device that can handle currents up to 266 A and voltages up to 200 V. It is also an effective solution for power switching, providing fast switching speeds and low on-state resistance as well as low output capacitance. The device is available in both standard and robust TO-247 and TO-220 packages.

The SI5443DC-T1-GE3 is based on a MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) structure. It consists of a number of layers, including the gate, source and drain. The gate and source are separated by a thin layer of oxides, while the drain and source are separated by a thicker layer of oxides. The gate voltage is used to create a vertical electric field through the oxide, which causes an inversion layer to form in the channel and changes the conductivity between drain and source. This is known as the channel. When the gate voltage is increased the channel resistance is decreased, allowing more current to flow between the drain and source.

The SI5443DC-T1-GE3 is designed to optimize gate and drain charge as well as current and voltage performance. It also provides a robust and reliable structure that can ensure long-term operation in high temperature and high-frequency environments. The device offers low on-state resistance, fast switching speed and low output capacitance for effective power switching control. Its thermal design ensures proper heat dissipation and high channel breakdown voltage to improve thermal and voltage performance.

The SI5443DC-T1-GE3 is a reliable, high-performance power switching solution with a wide operating temperature range, making it suitable for a variety of automotive and industrial applications. It is a versatile device with wide power supply capabilities, low input capacitance and fast switching speed. Its robust design ensures long-term operation and reliability.

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