SI5461EDC-T1-E3

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The SI5461EDC-T1-E3 is a single N-Channel enhanced HEXFET power metal oxide semiconductor field-effect transistor (MOSFET) from Siliconix Corporation. It features a low on-resistance, high current handling capability, fast switching times and low gate charge. The SI5461EDC-T1-E3 is used in a variety of applications such as switching regulators, DC-DC converters, motor control, lighting and general power switching.

Overview of the SI5461EDC-T1-E3

The SI5461EDC-T1-E3 is a N-Channel enhanced HEXFET MOSFET. It is an energy efficient, low on-resistance MOSFET designed for use in high power circuit applications. The MOSFET has a minimum drain to source breakdown voltage of 100V1 and a maximum drain current of 61A. It has a maximum total gate charge of 2.8nC, a maximum maximum drain to source on-resistance of 0.065mΩ and a gate-to-source breakdown voltage of -15V. The MOSFET is a high power, low on-resistance N-Channel device and is available in a TO-220 package.

Application Field and Working Principle of the SI5461EDC-T1-E3

The SI5461EDC-T1-E3 is mainly used in switching power supplies and DC-DC converters. It is also used in automotive, industrial, communications, and entertainment applications. The MOSFET has a very low on-resistance and is therefore ideally suited for power applications. The MOSFET is capable of switching high currents at low gate-drive levels. This makes it ideal for use in medium to high frequency applications. As the MOSFET has a high temperature operating range (150°C max.) it can be used in applications where reliability is key.

The working principle of the SI5461EDC-T1-E3 is based on the principle of MOSFETs. The MOSFET operates by controlling the amount of current flowing between the drain and source by applying a voltage to the gate. When a voltage is applied to the gate, it creates an electric field, which controls the flow of current through the MOSFET. The MOSFET is an energy efficient and low-on resistance device and is therefore ideal for applications where power losses are of concern.

Conclusion

The SI5461EDC-T1-E3 is a single-channel enhanced NMOS power MOSFET. It has a low on-resistance, a maximum drain current of 61A, and a maximum total gate charge of 2.8nC. It is mainly used in switching power supplies and DC-DC converters as it is capable of switching high currents at low gate-drive levels and has a high temperature operating range. The working principle of the MOSFET is based on the principle of controlling the amount of current flow by applying a voltage to the gate.

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