SI5475BDC-T1-GE3

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The SI5475BDC-T1-GE3 is a single N‑channel enhancement-mode vertical DMOS transistor, which was designed for high voltage, high speed power switching applications. This transistor has been optimized to operate as a switch when driven by a gate voltage, as an amplifier when used as an input to an external load, or as a high gain power switch when connected to the load. With its high voltage, high switching speed, and low on-state resistance, the SI5475BDC-T1-GE3 is an ideal choice for a wide range of applications, including switching applications, DC-DC converters, high power amplifiers, RF power amplifiers, high voltage DC-DC converters, automotive and industrial motor drives, and in-line power switching.

The SI5475BDC-T1-GE3 transistor is a vertical N-channel enhancement-mode MOSFET transistor with a rated drain-source voltage of up to 200V and a drain-source current of up to 7A. This model also features very low on-state resistance and a breakdown voltage of 300V, making it ideal for use in high voltage applications. Furthermore, it offers excellent switching speed and efficiency, which makes it well-suited for high current applications.

The working principle of the SI5475BDC-T1-GE3 is based on the N-channel Enhancement-mode MOSFET transistors. In this type of transistor, the drain current is controlled by the gate voltage. When a positive voltage is applied to the gate, the p-type enhancement-mode conducting channel is formed between the drain and the source and a current can flow between them. When the gate voltage is reduced to zero, the channel is shut off and current can no longer flow. The voltage and current ratings of the SI5475BDC-T1-GE3 transistor make it suitable for use in a wide range of high voltage and high current applications.

The SI5475BDC-T1-GE3 is ideal for a variety of power switching applications due to its high voltage and high switching speed capabilities. Its low on-state resistance makes it ideal for use as a power switch in DC-DC converters, high power amplifiers, RF power amplifiers, high voltage DC-DC converters, automotive and industrial motor drives, and in-line power switching. Its high voltage and low on-state resistance also make it suitable for use in a variety of circuit protection applications.

The SI5475BDC-T1-GE3 also features excellent features such as a low switching noise, high ESD protection and a built-in ESD protection circuit. Its wide operating voltage range makes it suitable for a variety of applications. Finally, its high voltage, high switching speed, and low on-state resistance characteristics make it ideal for high power switching applications.

In conclusion, the SI5475BDC-T1-GE3 is a single N-channel enhancement-mode vertical DMOS transistor with a rated drain-source voltage of up to 200V and a drain-source current of up to 7A. Its high voltage, high switching speed and low on-state resistance make it suitable for high voltage and high current applications. Furthermore, its low switching noise, high ESD protection and built-in ESD protection circuit make it ideal for a wide range of power switching applications.

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