SI5484DU-T1-GE3

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The SI5484DU-T1-GE3 is a field-effect transistor (FET) designed for use in a variety of applications. The device is a single-gate FET with a low on-resistance of only 150 mΩ which makes it an ideal choice for low-voltage, precision power conversion, motor drive, and switching applications. The device also features a maximum current rating of 7 A, a high power dissipation of 1.2 W, and a small form factor.

The SI5484DU-T1-GE3 is the latest in a long line of FETs and MOSFETs developed by Silicon Labs. The device is designed to provide reliable, efficient power conversion, motor drive, and switching solutions for a range of applications. The device features an integrated Gate-Drain (GD) NMOS design, enabling efficient and fast device switching, with low-Rdson of 150 mΩ.

The SI5484DU-T1-GE3 is designed for applications with high performance requirements, such as power conversion and motor drive applications that require fast switching times and high efficiency. In addition, the device has a maximum operating voltage of 5 V, a gate-to-source voltage of 2.9 V, and a maximum drain current of 7 A, making it suitable for use in a wide range of applications. Furthermore, the device has a wide temperature range of −40°C to +125°C, making it suitable for use in a variety of environmental conditions.

The SI5484DU-T1-GE3 is designed for use in low-voltage power conversion, motor drive, and switching applications. The device uses a native P-type channel for ultra-low on-resistance, which reduces power loss and improves overall efficiency. It is designed to operate over a wide temperature range, with a minimum operating temperature of −40°C and a maximum operating temperature of +125°C. The low on-resistance of 150 mΩ makes the device ideal for high-performance, low-voltage power conversion, motor drive, and switching applications.

The device uses a floating-gate NMOS configuration, which improves efficiency and reduces switching losses by eliminating the need for a body diode. The device features a maximum voltage rating of 5 V, a high power dissipation of 1.2 W, and a small form factor, making it suitable for use in a variety of applications. The device is also designed to provide reliable, efficient switching, with a maximum drain current of 7 A and ultra-low Rdson of 150 mΩ.

The SI5484DU-T1-GE3 is designed for a variety of low-voltage power conversion, motor drive, and switching applications. It is designed to provide reliable, efficient switching performance, with low-Rdson of 150 mΩ and a maximum drain current of 7 A. The device is suitable for use in a wide range of environmental conditions and has a wide temperature range of −40°C to +125°C. The device is designed for high performance, low-voltage power conversion, motor drive, and switching applications, and is a great choice for any application that requires reliable and efficient switching.

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