SI5479DU-T1-GE3

Vgs(th) (Max) @ Id:	1V @ 250µA
Package / Case:	PowerPAK® ChipFET™ Single
Supplier Device Package:	PowerPAK® ChipFet Single
Mounting Type:	Surface Mount
Operating Temperature:	-55°C ~ 150°C (TJ)
Power Dissipation (Max):	3.1W (Ta), 17.8W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	1810pF @ 6V
Vgs (Max):	±8V
Gate Charge (Qg) (Max) @ Vgs:	51nC @ 8V
Series:	TrenchFET®
Rds On (Max) @ Id, Vgs:	21 mOhm @ 6.9A, 4.5V
Drive Voltage (Max Rds On, Min Rds On):	1.8V, 4.5V
Current - Continuous Drain (Id) @ 25°C:	16A (Tc)
Drain to Source Voltage (Vdss):	12V
Technology:	MOSFET (Metal Oxide)
FET Type:	P-Channel
Part Status:	Obsolete
Packaging:	Tape & Reel (TR)

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SI5479DU-T1-GE3 is a N-Channel MOSFET (Metal–Oxide–Semiconductor Field-Effect Transistor) produced by silicon labs. It is a surface mounted single switch transistor that is frequency and voltage adjustable. This transistor is used in applications such as switching high-power drivers, adjusting power levels, high-frequency pulsing, and building-block current sourcing and sinking. It is designed to reduce power losses and provide high switching speed, low resistance and high voltage capability.This transistor is characterized by its N-channel construction and its large dielectric strength. It is also known for its low on-resistance and threshold voltage, allowing for higher efficiency in power conversion applications. The Si5479DU-T1-GE3 is commonly used in switching applications such as: high side and low side drivers, adjustable power levels, high-speed pulsing and building-block current sourcing and sinking.The Si5479DU-T1-GE3 is a MOSFET (Metal–Oxide–Semiconductor Field-Effect Transistor) which means that it has a voltage controllable gate connection. This transistor provides a low-resistance connection between the top and bottom channels while maintaining its low on-resistance and high junction temperature. The ability of the gate connection to control the resistance between the source and drain is the main reason why this transistor is ideal for many switching applications. The main working principle of the transistor is that when an appropriate gate voltage is applied, it induces a charge carrier (electrons or holes) on its semiconductor channel between the source and drain. This type of transistor uses the channel as a gate - controlling the charge carriers and controlling the current flow between the source and drain.The gate connection of the Si5479DU-T1-GE3 is designed to regulate the resistance between the source and the drain. A small amount of gate voltage will create a low-resistance connection between the two channels while a higher voltage will create a higher connection resistance. This means that the transistor can be used to control the current flowing between the two channels by adjusting the gate voltage. The application field of the transistor is mainly used for the switching of high-power drivers, high-frequency pulsing, and adjustable power levels.The Si5479DU-T1-GE3 is also known for its high switching speed and low resistance, making it ideal for use in many power conversion applications and in many devices. This transistor is also characterized by its low drain-source on-state resistance (Rds(on)), which allows for more efficient power transfer and a higher power efficiency.The Si5479DU-T1-GE3 is also very reliable in terms of its application and power conversion capabilities. This transistor has a high junction temperature and a low on-resistance, making it very stable and reliable in switching applications. The low power losses that the device has, means that it can be used effectively in many power conversion applications.Overall, the Si5479DU-T1-GE3 is a highly versatile and reliable device that is perfect for any application requiring a low-power switch. Its ability to control the charge carriers, as well as its low resistance and high voltage capability, make it an ideal solution for many different types of power conversion applications. The device’s reliability makes it a great choice for many high-power devices, and its low power losses make it an efficient switch for many devices.

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