Allicdata Part #: | SI5441BDC-T1-GE3-ND |
Manufacturer Part#: |
SI5441BDC-T1-GE3 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Siliconix |
Short Description: | MOSFET P-CH 20V 4.4A 1206-8 |
More Detail: | P-Channel 20V 4.4A (Ta) 1.3W (Ta) Surface Mount 12... |
DataSheet: | SI5441BDC-T1-GE3 Datasheet/PDF |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | 1.4V @ 250µA |
Package / Case: | 8-SMD, Flat Lead |
Supplier Device Package: | 1206-8 ChipFET™ |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 1.3W (Ta) |
FET Feature: | -- |
Vgs (Max): | ±12V |
Gate Charge (Qg) (Max) @ Vgs: | 22nC @ 4.5V |
Series: | TrenchFET® |
Rds On (Max) @ Id, Vgs: | 45 mOhm @ 4.4A, 4.5V |
Drive Voltage (Max Rds On, Min Rds On): | 2.5V, 4.5V |
Current - Continuous Drain (Id) @ 25°C: | 4.4A (Ta) |
Drain to Source Voltage (Vdss): | 20V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | P-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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The SI5441BDC-T1-GE3 is a type of field effect transistor (FET) that is used for a variety of applications, ranging from power management and motor control to communication, industrial and automotive systems. It is a single FET, meaning that it is composed of just a single transistor element, which offers the advantage of high current capability, low input capacitance and high power dissipation.
The SI5441BDC-T1-GE3 is a P-channel enhancement mode FET and it is designed to operate in either the enhancement or depletion mode. In the enhancement mode, a positive Gate-source voltage Threshold (VGS) will turn on the FET, allowing current to flow, while a negative VGS will keep the device turned off. The gate threshold voltage of the device is typically 3.2V.
The device has an excellent temperature coefficient, which results in a very low voltage noise and fast current spikes. It has a low drain-source On-resistance that is typically 15mΩ at 25°C and a breakdown voltage of 40V. The device is designed to handle high-voltage loads with a blocking voltage of 650V. The SI5441BDC-T1-GE3 has a low reverse transfer capacitance of 1.6pF and a high forward transfer capacitance of 8.3pF, making it well suited for high current applications.
The SI5441BDC-T1-GE3 is ideal for use in applications such as power management and power line protection, as well as portable devices and appliances. It can also be used in motor control and communication applications, as well as automotive, industrial and aerospace systems. The device is offered in a hermetic, TO-252 can style package, which offers the advantage of low thermal resistance and high reliability.
The SI5441BDC-T1-GE3 is a versatile device that offers a variety of benefits, making it a great choice for a wide range of applications. It is easy to use, offers low On-state resistance, low input capacitance and high power dissipation, as well as a high breakdown voltage, low reverse transfer capacitance and high forward transfer capacitance. It is a robust solution for high-voltage loads and power line protection, allowing for efficient power management and motor control.
The specific data is subject to PDF, and the above content is for reference
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