SI5476DU-T1-GE3

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The SI5476DU-T1-GE3 is a P-Channel Enhancement Mode Field Effect Transistor (MOSFET) designed for high-current switching and linear applications. The device is offered with extended drain and source current design options in a single chip. By providing a wide variety of applications, the SI5476DU-T1-GE3 can be used in applications such as DC-to-DC converters, voltage regulators, and switching power supplies.

The device has a very low on-state resistance (R(DSon)) and provides fast switching performance. This makes the SI5476DU-T1-GE3 ideal for high efficiency power management designs. The device can be used for both low and high side applications. The P-Channel MOSFET features an enhanced gate oxide insulator technology to provide industry-leading breakdown and good thermal performance. The device is available in a SOT-23 package, which allows for efficient space and power savings.

The SI5476DU-T1-GE3 is built with a self-aligning source rib, which allows it to function without additional source-to-drain alignment. The device incorporates a special dual gate structure that provides an excellent linear common source transconductance and very low gate-source capacitance. This helps to reduce the possibility of oscillations and noise when the device is used in switching circuits.

The device is suitable for both low and high power applications. The low on-state resistance, along with the single chip design, makes the device excellent for high efficiency designs. The single chip design also allows for improved ease of use and reliability. The device features an extended drain-to-source voltage range, which provides increased voltage breakdown capabilities. The extended drain-to-source voltage range also helps to minimize the power dissipation in the event of external gate short-circuit faults.

The SI5476DU-T1-GE3 is designed to operate at a wide range of temperatures. The device employs a maximum junction temperature of 150°C and a maximum storage temperature of -65°C to 150°C. The device is available with a wide variety of gate capacitance options, ranging from 5.2 to 19.0 pF, making it suitable for a variety of power management designs. The device is also capable of operation in both the cyclic and latching mode.

In summary, the SI5476DU-T1-GE3 P-Channel Enhancement Mode Field Effect Transistor is designed for high-current switching and linear applications. It features a very low on-state resistance and provides fast switching performance. It is available in a SOT-23 package, with a wide range of gate capacitance options, and operates over a wide range of temperatures. It is suitable for both low and high power applications, and is capable of operation in both the cyclic and latching mode.

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