Allicdata Part #: | SI5480DU-T1-E3TR-ND |
Manufacturer Part#: |
SI5480DU-T1-E3 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Siliconix |
Short Description: | MOSFET N-CH 30V 12A PPAK CHIPFET |
More Detail: | N-Channel 30V 12A (Tc) 3.1W (Ta), 31W (Tc) Surface... |
DataSheet: | SI5480DU-T1-E3 Datasheet/PDF |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | 3V @ 250µA |
Package / Case: | PowerPAK® ChipFET™ Single |
Supplier Device Package: | PowerPAK® ChipFet Single |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 3.1W (Ta), 31W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 1230pF @ 15V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 34nC @ 10V |
Series: | TrenchFET® |
Rds On (Max) @ Id, Vgs: | 16 mOhm @ 7.2A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 12A (Tc) |
Drain to Source Voltage (Vdss): | 30V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tape & Reel (TR) |
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The SI5480DU-T1-E3 is a single, low-capacitance, low-voltage ESD protection device designed for protecting high-speed, data-centric devices from ESD damage in consumer, automotive, and industrial applications. It features a low clamping voltage, low power consumption, and high peak ESD current capability. The device is also designed to reduce drivers’ switching current and to provide a more accurate ESD protection. This makes it a suitable choice for applications that need protection from both ESD and electrical overstress (EOS).
Application Field
The SI5480DU-T1-E3 is suitable for protecting high-speed data interfaces, such as USB 2.0, HDMI, and LVDS, from ESD damage and electrical overstress. It can be used in applications such as consumer electronics, automotive and industrial equipment. The device is also suitable for protecting optical network interfaces, sensors, transceivers and wireless communication links.
Working Principle
The SI5480DU-T1-E3 is an active protection device that works by sensing and clamping an electrical overstress (EOS) for protection. It features low capacitance, low voltage, and fast response time to protect against both ESD damage and electrical overstress. When the device senses a voltage spike above its voltage rating, it will enter into a clamp mode to prevent the surge current from rising too high. In this mode, the device will start to absorb the surge energy and dissipate it as heat. This prevents the device from entering into a destructive mode and protects the connected device and its components from damage.
The device also features a low power consumption of less than 1μA. This allows it to operate without consuming too much energy and contributing to an idle current. This makes it suitable for applications that require low power and long battery life.
The SI5480DU-T1-E3 also features a very wide operating temperature range of -40ºC to +150ºC. This makes it suitable for operation in harsh environments, such as automotive and industrial applications. The device is RoHS Compliant, making it compliant with the latest environmental standards.
Conclusion
The SI5480DU-T1-E3 is a single, low-capacitance, low-voltage ESD protection device designed for protecting high-speed, data-centric devices from ESD damage and electrical overstress in consumer, automotive, and industrial applications. It features low capacitance, low voltage, low power consumption, and wide operating temperature range for optimal performance in harsh environments. The device also has a high peak ESD current capability for providing protection from both ESD and electrical overstress. This makes it a suitable choice for a variety of high-speed data interface applications.
The specific data is subject to PDF, and the above content is for reference
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