SI5406CDC-T1-GE3

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The SI5406CDC-T1-GE3 is a single vertical MOSFET field-effect transistor (FET) designed to provide exceptional performance in electronic systems and applications. This device has an on-resistance of 10.7mOhms, a gate threshold voltage of −4V, and a drain current of 6A. Additionally, it has a drain-source breakdown voltage of −30V, a gate-slew-rate (for a small signal) of 38V/nS, and an on-state gate charge of 40nC. With such impressive specifications, the SI5406CDC-T1-GE3 can withstand heavy current loads and is capable of widespread application in systems like computers, robotics and robotics’ accompanying controls, consumer electronics, medical devices, communications, automotive applications, and audio equipment, among many others.

The SI5406CDC-T1-GE3 is based on a single vertical MOSFET structure. MOSFET stands for Metal Oxide Semiconductor Field-Effect Transistor, and is a type of transistor with an insulated gate, which functions by controlling the flow of current between two terminals, called the source and drain. This type of transistor also has three distinct terminals on its body, the gate, drain and source, which are all insulated from one another.

As the SI5406CDC-T1-GE3 offers exceptional performance, it can be used in many practical applications. It can be used as a simple switch, in which a low voltage control signal applied to the gate can control the current flow between the drain and source. Additionally, it can also be used as a linear-control device, where the gate-source voltage is continuously varied, resulting in a corresponding change in the drain current. This can be utilized in applications such as signal amplification, signal modulation, and voltage regulation.

In addition to providing excellent performance, the SI5406CDC-T1-GE3 also offers excellent protection against ESD, which stands for Electro-static Discharge. This type of charge buildup can be extremely damaging to electronics, and can result in system failures or irreversible damage. The SI5406CDC-T1-GE3 has an internal ESD protection structure which effectively prevents this type of damage from occurring, ensuring that your system remains safe from such breakdowns.

The SI5406CDC-T1-GE3 is a highly efficient device, with a low on-resistance, which ensures that its power loss remains comparatively low compared to that of other similar devices. Additionally, its low gate-threshold voltage means that it can be operated at a much lower voltage than other MOSFETs, resulting in significantly lower power consumption and improved energy efficiency.

Overall, the SI5406CDC-T1-GE3 is a highly reliable and efficient MOSFET, with an impressive specification set and excellent ESD protection. Such features have enabled it to be applied in a large number of applications and systems, including computers, robotics, consumer electronics, medical devices, communications, automotive applications, and audio equipment.

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