SI5449DC-T1-GE3

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The SI5449DC-T1-GE3 is a single N-Channel silicided poly sIgd MOSFET with integrated ESD protection. It is designed to offer low on-resistance with integrated ESD protection that exceeds 5 kV Human Body Model. This device features a very low on-resistance of 9.09 mΩ max., 25 A continuous drain current, up to 80 V drain source voltage and thermal shutdown circuit.

The SI5449DC-T1-GE3 has a wide range of applications, from low-side and high-side switches to power management. Its ability to shift logic level signals translates into high performance and low power consumption. Additionally, the device can be used for battery charging, LED lighting, and power supply applications.

The working principle of the SI5449DC-T1-GE3 depends on the biasing of the gate. When the gate is biased positive with respect to the source, the MOSFET turns on, allowing current to flow from drain to source. When the gate is biased more negatively with respect to the source, the MOSFET turns off, preventing current from flowing. The off state has a low resistance (usually in the range of hundreds of mΩs), while the on state has a much higher resistance (usually in the range of several kΩs).

The SI5449DC-T1-GE3 is designed to operate over a temperature range of -55°C to 150°C. It features fast switching speeds due to its low gate charge and low output capacitance. In addition, the device is available in the DFN and SOT-23 packages.

The SI5449DC-T1-GE3 is highly recommended for use in applications that require a reliable, low-cost MOSFET with ESD protection. It is a popular choice for switching, power management, and battery charging applications. It is easy to use and features integrated ESD protection and a low RDSon.

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