SI5481DU-T1-E3

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The SI5481DU-T1-E3 is a MOSFET device designed as a versatile, single N-channel power device with improved efficiency and less power losses. It comes with an ultra-low RDS(on) of 30 mOhm, making it ideal for most power switch applications. The device can be used in bi-directional configuration, making it suitable for both power conversion and power transmission applications. In power transmission applications, this device can be used to switch between two or more power sources while keeping power loss at a minimum. The SI5481DU-T1-E3 is also suitable for use in applications with high power density such as electric vehicle (EV) and storage array systems, where minimizing power loss is of utmost importance.

The SI5481DU-T1-E3 utilizes an advanced vertical structure which provides excellent reliability and high thermal resistance. This device has a wide power range, with a maximum voltage rating of 1,200 V, a maximum current rating of 8 Amps, and an operating temperature range from -55°C to +175°C. It also offers a wide range of optically-coupled outputs and voltage control options. This allows the user to tailor the device to the needs of any specific application with ease.

The SI5481DU-T1-E3 utilizes an insulated-gate field-effect transistor (IGFET) with a silicon dioxide (SiO₂) insulation layer that forms an input capacitance. This capacitance is coupled with the gate-source voltage (V_gs) in order to control the current flow and switch states. When the input capacitance is charged, a gate charge is stored and acts as an electrical “gate-on” or “gate-off” signal. This can then be used to open or close the power switch and control current flow.

The SI5481DU-T1-E3 has several applications in power electronics due to its improved efficiency and low power dissipation. It can be used in switched-mode power supplies, DC-DC converters, AC-DC converters, and more. It can also be used to control the flow of current in motor control applications. As such, the SI5481DU-T1-E3 is ideal for any application where improved power efficiency and reliability is of utmost importance.

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