SI5402DC-T1-GE3

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The Si5402DC-T1-GE3 transistor is an advanced power MOSFET, implementing superior power efficiency and reliability. This n-channel MOSFET is designed for use in dc-dc converters and other switching power applications. As such, it finds its greatest use in high-efficiency, high-power converter circuits where robust performance, high accuracy, and stability are essential.

The Si5402DC-T1-GE3 has a variety of applications, depending on the particular requirements of the circuit. This device can be used in circuits requiring low on-resistance, or where a high current switching capacity is desired. It is suitable for applications such as those found in high-current, high-efficiency dc-dc converters, load-switching circuits, and pulse-width modulation (PWM) applications.

Working Principle

The Si5402DC-T1-GE3 MOSFET is based on the structure of a standard n-channel MOSFET transistor. The device consists of a drain and source, which are connected together in an electrically conductive channel of n type silicon material. An n-type polysilicone gate insulating layer is connected to the source and drain, between which the electrical charge passes when the transistor is ‘on’.

When a positive voltage is applied to the gate, electrons will be drawn from the source and drain into the polysilicone gate and the channel between the source and drain will begin to conduct. This electrical current is regulated by the voltage between the source and the gate. The higher the source-gate voltage, the higher the current conducted. This is known as ‘pulsing off’ and is the process through which the Si5402DC-T1-GE3 MOSFET will operate.

In order for the Si5402DC-T1-GE3 to operate correctly, it must be connected correctly. The gate is typically connected to the voltage source, the source is connected to the drain and the drain is connected to the load. In order for the MOSFET to be effective, the correct drain-to-source voltage needs to be applied and the correct gate-to-source voltage. It is important to note that the voltage applied to the drain should not exceed the rated drain-to-source voltage of the MOSFET in order to avoid damaging it.

Once the device is properly connected and the appropriate gate-to-source and drain-to-source voltages applied, the Si5402DC-T1-GE3 will begin to transmit electrical current between the source and the drain. The current conducted between the source and the drain is regulated by the gate-to-source voltage; by controlling this voltage, the current can be regulated to match the desired operating conditions.

The Si5402DC-T1-GE3 is widely used in high-efficiency, high-power dc-dc converters and other switching power applications. This n-channel MOSFET provides superior power efficiency and reliability, and is designed to be used in applications where robust performance, high accuracy and stability are essential.

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