SI5445BDC-T1-E3 Allicdata Electronics
Allicdata Part #:

SI5445BDC-T1-E3TR-ND

Manufacturer Part#:

SI5445BDC-T1-E3

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Vishay Siliconix
Short Description: MOSFET P-CH 8V 5.2A 1206-8
More Detail: P-Channel 8V 5.2A (Ta) 1.3W (Ta) Surface Mount 120...
DataSheet: SI5445BDC-T1-E3 datasheetSI5445BDC-T1-E3 Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Vgs(th) (Max) @ Id: 1V @ 250µA
Package / Case: 8-SMD, Flat Lead
Supplier Device Package: 1206-8 ChipFET™
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 1.3W (Ta)
FET Feature: --
Vgs (Max): ±8V
Gate Charge (Qg) (Max) @ Vgs: 21nC @ 4.5V
Series: TrenchFET®
Rds On (Max) @ Id, Vgs: 33 mOhm @ 5.2A, 4.5V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Current - Continuous Drain (Id) @ 25°C: 5.2A (Ta)
Drain to Source Voltage (Vdss): 8V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Obsolete
Packaging: Tape & Reel (TR) 
Description

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The SI5445BDC-T1-E3 is one of the latest SiGe transistors developed by Siliconix. It is a high-voltage monolithic MOSFET, specifically designed for demanding applications in various fields, such as automotive, industrial and medical. This device is equipped with advanced features to reduce power consumption, increase efficiency, and improve overall performance.

The SI5445BDC-T1-E3 is ideal for applications that require high voltage and low RDS(on) combined with low gate charge. It has very low on-resistance (RDS(on)), which enables better efficiency and lower power dissipation when compared to other transistor types. It has a rated voltage of -100V to 28V and a maximum RDS(on) of 0.2 ohm along with a maximum on-state drain current of 2.5A and a maximum off-state drain-source breakdown voltage of 40V.

The working principle of the SI5445BDC-T1-E3 is based on the MOSFET\'s intrinsic devices structure. The power supply voltage is applied to the drain terminal, and the gate terminal is connected to the body of the transistor. The body of the transistor acts as a gate electrode and controls the flow of electrons between the source and the drain terminals. When no voltage is applied to the gate, the transistor will be in a “cutoff” state and no current will flow between the source and the drain. When a voltage is applied to the gate, current will flow between the source and the drain.

The SI5445BDC-T1-E3 provides a unique combination of low on-resistance and high current-handling capabilities, making it an ideal device for a wide range of applications. It is suitable for use in automotive, industrial, and medical fields such as motor control, power management, and high-voltage circuit protection. It is also commonly used in solar, battery, and UPS power systems.

In automotive applications, the SI5445BDC-T1-E3 can be used for electronic power steering, as well as electronic door lock, window automation, and sunroof control. In industrial applications, it can be used for motor control, power management, and RS-485/RS-232 communications. In medical applications, it can be used for medical equipment control, patient care, and diagnostics. In all of these applications, the SI5445BDC-T1-E3 offers improved reliability and performance compared to other transistors.

The SI5445BDC-T1-E3 is a high-performance MOSFET that offers a unique combination of high voltage and low RDS(on). Its combination of low on-resistance and high current-handling capabilities makes it suitable for a wide range of applications in automotive, industrial, and medical fields. With its advanced features, it enables higher efficiency, lower power consumption, and improved overall performance.

The specific data is subject to PDF, and the above content is for reference

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