Allicdata Part #: | SI5447DC-T1-E3TR-ND |
Manufacturer Part#: |
SI5447DC-T1-E3 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Siliconix |
Short Description: | MOSFET P-CH 20V 3.5A 1206-8 |
More Detail: | P-Channel 20V 3.5A (Ta) 1.3W (Ta) Surface Mount 12... |
DataSheet: | SI5447DC-T1-E3 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 450mV @ 250µA (Min) |
Package / Case: | 8-SMD, Flat Lead |
Supplier Device Package: | 1206-8 ChipFET™ |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 1.3W (Ta) |
FET Feature: | -- |
Vgs (Max): | ±8V |
Gate Charge (Qg) (Max) @ Vgs: | 10nC @ 4.5V |
Series: | TrenchFET® |
Rds On (Max) @ Id, Vgs: | 76 mOhm @ 3.5A, 4.5V |
Drive Voltage (Max Rds On, Min Rds On): | 1.8V, 4.5V |
Current - Continuous Drain (Id) @ 25°C: | 3.5A (Ta) |
Drain to Source Voltage (Vdss): | 20V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | P-Channel |
Part Status: | Obsolete |
Packaging: | Tape & Reel (TR) |
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The SI5447DC-T1-E3 is a n-channel advanced, robust MOSFET driver that is designed to help easily drive large and small n-MOSFETs for the most demanding power supply, motor control, and industrial applications. This device is capable of delivering up to 10A peak and 7.5A continuous load current over an operating range of 4.5V to 18V. Its advanced gate drive provides ease of use and efficiency regardless of load magnitude.
Application Field
The SI5447DC-T1-E3 offers protection features, such as thermal shutdown, open/short circuit detection, fast over current protection, and easily adjustable OVP and UVP levels, making it an ideal choice for applications in automotive, aerospace, industrial and consumer markets. It is also suitable for high power applications such as battery management systems, switched mode power supplies (SMPS), automotive power modules, battery chargers and DC/DC converters.
The SI5447DC-T1-E3 is ideal for any application where fast switching, low power consumption, and high reliability are required, including motor control applications such as electric vehicles, pump inverters, motor drive inverters, and motor drives for servo and robot control.
Working Principle
At the centre of the SI5447DC-T1-E3’s operation is a unique switching process known as pulse width modulation (PWM). This process works by rapidly switching a low side MOSFET’s gate on and off at frequencies in the tens of thousands of hertz, which results in very high current with very little power dissipation. The pulse width modulation is accomplished by programming the SI5447DC-T1-E3’s internal control logic to continually adjust the duty cycle of the low side MOSFET until the desired output current is achieved.
The SI5447DC-T1-E3 is also designed to prevent short-circuits between the high side and low side MOSFETs. In the event of a short-circuit, the device will detect the fault and immediately turn off the low side MOSFET until the fault is cleared. This feature prevents catastrophic failure of the power MOSFETs and helps extend the life of the device.
In addition, the SI5447DC-T1-E3 includes protection circuitry against overvoltage, undervoltage and overcurrent conditions. If the output voltage exceeds the upper or lower threshold set by the user, the device will turn off the output until the fault is cleared. If the output current exceeds the user-defined maximum, the device will limit the output current and turn off the output until the fault is cleared.
In summary, the SI5447DC-T1-E3 offers a robust and reliable solution for driving high current power MOSFETs in demanding applications. Its advanced protection circuitry and intuitive programming interface make it an ideal choice for automotive, aerospace, industrial, and consumer applications.
The specific data is subject to PDF, and the above content is for reference
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SI5406DC-T1-GE3 | Vishay Silic... | 0.0 $ | 1000 | MOSFET N-CH 12V 6.9A 1206... |
SI5441DC-T1-E3 | Vishay Silic... | -- | 1000 | MOSFET P-CH 20V 3.9A 1206... |
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SI5402BDC-T1-E3 | Vishay Silic... | -- | 1000 | MOSFET N-CH 30V 4.9A 1206... |
SI5406DC-T1-E3 | Vishay Silic... | -- | 1000 | MOSFET N-CH 12V 6.9A 1206... |
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