SI5480DU-T1-GE3

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The SI5480DU-T1-GE3 is a 3V N-Channel MOSFET with EN-Sapphire substrate. It is designed to handle the high frequency switching and high pixel count applications, including laser diode, CCD and LCDs application. With the minimum on resistance (RDS(on)) of 4.4 Ohms and superior on-resistance matching, which is important for power savings, high frequency switching and accurate control. The SI5480DU-T1-GE3 is ideal for power-on reset application, high current pulse and high frequency switching applications.

The basic working principle of the SI5480DU-T1-GE3 is that an electric field is used to generate an electric charge in a semiconductor\'s conduction band. This charge, when passed through the semiconductor, causes current to flow. The electric field can be used to control the amount of current flowing through the semiconductor. This is done by changing the amount of voltage applied to the gate of the semiconductor, which in turn affects the electric field that is generated in the conduction band.

The gate of the SI5480DU-T1-GE3 is designed to specify a low gate threshold voltage. This helps to reduce switching losses and energy consumption, by allowing a low voltage drive current to be applied. This feature also improves the response time of the device, and the switching frequency can be increased with a higher gate drive current. The output is short-circuit protected, which provides additional protection for the device, and the leakage current levels are also low.

The Si5480DU-T1-GE3 is mainly used in application fields like power switching, power conversion, DC/DC buck and boost converters, LED lighting, motor drives, and automotive applications. It is suitable for mobile phones, tablets, and PCs, as well as other low-dropout regulator (LDO) applications. It is also very suitable for high-density power distribution boards and high-speed logic level switching applications. Its low gate threshold voltage and on-resistance matching make it ideal for small nodes, as well as high-frequency switching and high pixel count applications. In addition, its large surface area also makes it suitable for high-speed serial data transmission.

The Si5480DU-T1-GE3 offers excellent thermal and noise characteristics, making it suitable for operation even in the most extreme environments. Its wide channel width provides superior performance, with a breakdown voltage of 800V. The device also features fast turn-off, low gate charge, and low output capacitance, which reduce switching losses and power consumption. The Au gate with EN-Sapphire substrate provides excellent reliability and improves soldering between the gate and channel layers.

In summary, the Si5480DU-T1-GE3 is a high-performance 3V N-Channel MOSFET with EN-Sapphire substrate. It provides excellent performance in high frequency switching and high pixel count applications. It offers a low gate threshold voltage, excellent on-resistance matching, fast turn-off, and low output capacitance. Its wide channel width ensures superior performance, with a breakdown voltage of 800V. Its EN-Sapphire substrate provides excellent reliability and allows for easy soldering. The device is suitable for a variety of application fields, including power switching, power conversion, LED lighting, motor drives, and automotive applications.

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