SI5475BDC-T1-E3

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The SI5475BDC-T1-E3 is a high-voltage, high-current N-channel enhancement-mode power Field Effect Transistor (FET). This FET can be used in a wide variety of applications, especially those that require high power handling capabilities. It is commonly used in power management applications and SOFT-START applications, among others. The SI5475BDC-T1-E3 has a drain-source voltage rating of up to 200 V and a drain current of up to 18 A.

The SI5475BDC-T1-E3 is a modern FET technology which uses low on-resistance and low gate-drain charge to provide low conduction and switch times. This results in fast switching operation, and a high overall efficiency of power conversion. Additionally, this FET is built on an industry standard package, making it easy to implement, and allowing it to be used in a wide variety of applications.

The SI5475BDC-T1-E3 is a so-called "enhancement-mode" FET, meaning that it will switch on when its gate is driven to a level that is higher than its threshold voltage, typically between 3 and 7 volts. This can be done with either a voltage or current source, depending on the application. Once the voltage or current at the gate exceeds the threshold voltage, the FET will be turned on, allowing current to flow from the drain to the source. When gate drive is removed, the FET will turn off, preventing current from flowing.

Here are some of the main applications for the SI5475BDC-T1-E3 power FET:

• Power management applications
• High current switching applications
• DC-DC converter applications
• Motor control applications
• SOFT-START applications
• Voltage regulator applications

The SI5475BDC-T1-E3 is an excellent choice for these high-power applications, as it offers high current and voltage ratings, as well as high efficiency and low-cost implementation. With its industry-standard package, the SI5475BDC-T1-E3 is also easy to design-in, making it ideal for many high-power application designs.

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