SI5456DU-T1-GE3 Allicdata Electronics
Allicdata Part #:

SI5456DU-T1-GE3TR-ND

Manufacturer Part#:

SI5456DU-T1-GE3

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Vishay Siliconix
Short Description: MOSFET N-CH 20V 12A PPAK CHIPFET
More Detail: N-Channel 20V 12A (Tc) 3.1W (Ta), 31W (Tc) Surface...
DataSheet: SI5456DU-T1-GE3 datasheetSI5456DU-T1-GE3 Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Package / Case: 8-PowerVDFN
Supplier Device Package: 8-PowerPak® ChipFet (3x1.9)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 3.1W (Ta), 31W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 1200pF @ 10V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V
Series: TrenchFET®
Rds On (Max) @ Id, Vgs: 10 mOhm @ 9.3A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Drain to Source Voltage (Vdss): 20V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Tape & Reel (TR) 
Description

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The SI5456DU-T1-GE3 is a single N-channel junction field-effect transistor (JFET). It is a type of three-terminal semiconductor device, a FET (Field-effect transistor) that uses an electric field to control the flow of current. It is commonly used in applications where the target signal does not require large amounts of signal gain and can be used in applications such as low-level signal conditioning, signal switching, and linear voltage control.

The SI5456DU-T1-GE3 is a type of N-channel MOSFET, meaning that it is an N-type FET which has been fabricated over an oxide layer, increasing its current-carrying capacity and reducing its leakage current. The oxide layer also increases the reliability and stability of the device, typically allowing for higher operating temperatures and faster switching speeds.

A major benefit of using the SI5456DU-T1-GE3 is that it is able to operate at lower power, meaning that, when compared to BJTs (bipolar junction transistors), it can save power while delivering comparable performance. Additionally, the MOSFET typically requires less board space than recently developed components such as vibrating-membrane transistors, making it suitable for a wide range of applications.

The working principle of the SI5456DU-T1-GE3 is relatively simple. It is capable of transferring current through a channel between its source and drain terminals. The gate terminal is used to control the conductivity of the channel. When the potential difference between the gate and the source terminal is increased, the channel opens and a current passes between the source and drain terminals. Conversely, when the potential difference between the gate and the source terminal is decreased, the current flow reduces and the channel closes. This is due to the FET\'s negative resistance characteristics, which enable it to control the flow of current in this manner.

The SI5456DU-T1-GE3 is used in a variety of applications, from consumer electronics to industrial applications. Common consumer applications include audio equipment such as CD players, MP3 players, and speakers. It can also be used in various automotive applications, such as radio receivers, temperature controls, and power windows. Additionally, it is commonly used in industrial applications, such as robotic systems, automated assembly lines, and machine control modules.

The SI5456DU-T1-GE3 is a versatile component that can be used in a variety of applications where low power and small size are of primary concern. Its simple working principle and ability to control the flow of current make it an excellent choice for a wide range of applications, from consumer electronics to industrial applications.

The specific data is subject to PDF, and the above content is for reference

Related Products
Search Part number : "SI54" Included word is 40
Part Number Manufacturer Price Quantity Description
SI5435BDC-T1-GE3 Vishay Silic... -- 1000 MOSFET P-CH 30V 4.3A 1206...
SI5447DC-T1-GE3 Vishay Silic... 0.0 $ 1000 MOSFET P-CH 20V 3.5A 1206...
SI5429DU-T1-GE3 Vishay Silic... -- 1000 MOSFET P-CH 30V 12A PWR P...
SI5402BDC-T1-GE3 Vishay Silic... 0.0 $ 1000 MOSFET N-CH 30V 4.9A 1206...
SI5433BDC-T1-GE3 Vishay Silic... -- 1000 MOSFET P-CH 20V 4.8A 1206...
SI5456DU-T1-GE3 Vishay Silic... 0.0 $ 1000 MOSFET N-CH 20V 12A PPAK ...
SI5486DU-T1-GE3 Vishay Silic... -- 1000 MOSFET N-CH 20V 12A PPAK ...
SI5401DC-T1-GE3 Vishay Silic... -- 1000 MOSFET P-CH 20V 5.2A 1206...
SI5402DC-T1-E3 Vishay Silic... -- 1000 MOSFET N-CH 30V 4.9A 1206...
SI5402DC-T1-GE3 Vishay Silic... 0.0 $ 1000 MOSFET N-CH 30V 4.9A 1206...
SI5404BDC-T1-GE3 Vishay Silic... 0.0 $ 1000 MOSFET N-CH 20V 5.4A 1206...
SI5406DC-T1-GE3 Vishay Silic... 0.0 $ 1000 MOSFET N-CH 12V 6.9A 1206...
SI5441DC-T1-E3 Vishay Silic... -- 1000 MOSFET P-CH 20V 3.9A 1206...
SI5441DC-T1-GE3 Vishay Silic... 0.0 $ 1000 MOSFET P-CH 20V 3.9A 1206...
SI5445BDC-T1-GE3 Vishay Silic... 0.0 $ 1000 MOSFET P-CH 8V 5.2A 1206-...
SI5449DC-T1-E3 Vishay Silic... 0.0 $ 1000 MOSFET P-CH 30V 3.1A 1206...
SI5449DC-T1-GE3 Vishay Silic... 0.0 $ 1000 MOSFET P-CH 30V 3.1A 1206...
SI5461EDC-T1-E3 Vishay Silic... -- 1000 MOSFET P-CH 20V 4.5A CHIP...
SI5461EDC-T1-GE3 Vishay Silic... 0.0 $ 1000 MOSFET P-CH 20V 4.5A CHIP...
SI5463EDC-T1-GE3 Vishay Silic... 0.0 $ 1000 MOSFET P-CH 20V 3.8A 1206...
SI5473DC-T1-GE3 Vishay Silic... 0.0 $ 1000 MOSFET P-CH 12V 5.9A 1206...
SI5475BDC-T1-E3 Vishay Silic... -- 1000 MOSFET P-CH 12V 6A 1206-8...
SI5475BDC-T1-GE3 Vishay Silic... 0.0 $ 1000 MOSFET P-CH 12V 6A 1206-8...
SI5475DC-T1-E3 Vishay Silic... -- 1000 MOSFET P-CH 12V 5.5A 1206...
SI5475DC-T1-GE3 Vishay Silic... 0.0 $ 1000 MOSFET P-CH 12V 5.5A 1206...
SI5479DU-T1-GE3 Vishay Silic... 0.0 $ 1000 MOSFET P-CH 12V 16A CHIPF...
SI5480DU-T1-GE3 Vishay Silic... -- 1000 MOSFET N-CH 30V 12A PPAK ...
SI5481DU-T1-GE3 Vishay Silic... 0.0 $ 1000 MOSFET P-CH 20V 12A PPAK ...
SI5482DU-T1-GE3 Vishay Silic... 0.0 $ 1000 MOSFET N-CH 30V 12A PPAK ...
SI5484DU-T1-GE3 Vishay Silic... 0.0 $ 1000 MOSFET N-CH 20V 12A PPAK ...
SI5485DU-T1-GE3 Vishay Silic... 0.0 $ 1000 MOSFET P-CH 20V 12A PPAK ...
SI5401DC-T1-E3 Vishay Silic... 0.0 $ 1000 MOSFET P-CH 20V 5.2A 1206...
SI5402BDC-T1-E3 Vishay Silic... -- 1000 MOSFET N-CH 30V 4.9A 1206...
SI5406DC-T1-E3 Vishay Silic... -- 1000 MOSFET N-CH 12V 6.9A 1206...
SI5433BDC-T1-E3 Vishay Silic... -- 1000 MOSFET P-CH 20V 4.8A 1206...
SI5435BDC-T1-E3 Vishay Silic... -- 1000 MOSFET P-CH 30V 4.3A 1206...
SI5445BDC-T1-E3 Vishay Silic... -- 1000 MOSFET P-CH 8V 5.2A 1206-...
SI5447DC-T1-E3 Vishay Silic... 0.0 $ 1000 MOSFET P-CH 20V 3.5A 1206...
SI5463EDC-T1-E3 Vishay Silic... 0.0 $ 1000 MOSFET P-CH 20V 3.8A 1206...
SI5473DC-T1-E3 Vishay Silic... 0.0 $ 1000 MOSFET P-CH 12V 5.9A 1206...
Latest Products
IRFL31N20D

MOSFET N-CH 200V 31A D2PAKN-Channel 200V...

IRFL31N20D Allicdata Electronics
IXTT440N055T2

MOSFET N-CH 55V 440A TO-268N-Channel 55V...

IXTT440N055T2 Allicdata Electronics
IXTH14N80

MOSFET N-CH 800V 14A TO-247N-Channel 800...

IXTH14N80 Allicdata Electronics
IXFT23N60Q

MOSFET N-CH 600V 23A TO-268(D3)N-Channel...

IXFT23N60Q Allicdata Electronics
IXTT72N20

MOSFET N-CH 200V 72A TO-268N-Channel 200...

IXTT72N20 Allicdata Electronics
IXFT9N80Q

MOSFET N-CH 800V 9A TO-268N-Channel 800V...

IXFT9N80Q Allicdata Electronics