Allicdata Part #: | SI5456DU-T1-GE3TR-ND |
Manufacturer Part#: |
SI5456DU-T1-GE3 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Siliconix |
Short Description: | MOSFET N-CH 20V 12A PPAK CHIPFET |
More Detail: | N-Channel 20V 12A (Tc) 3.1W (Ta), 31W (Tc) Surface... |
DataSheet: | SI5456DU-T1-GE3 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 2.5V @ 250µA |
Package / Case: | 8-PowerVDFN |
Supplier Device Package: | 8-PowerPak® ChipFet (3x1.9) |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 3.1W (Ta), 31W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 1200pF @ 10V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 30nC @ 10V |
Series: | TrenchFET® |
Rds On (Max) @ Id, Vgs: | 10 mOhm @ 9.3A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 12A (Tc) |
Drain to Source Voltage (Vdss): | 20V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tape & Reel (TR) |
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The SI5456DU-T1-GE3 is a single N-channel junction field-effect transistor (JFET). It is a type of three-terminal semiconductor device, a FET (Field-effect transistor) that uses an electric field to control the flow of current. It is commonly used in applications where the target signal does not require large amounts of signal gain and can be used in applications such as low-level signal conditioning, signal switching, and linear voltage control.
The SI5456DU-T1-GE3 is a type of N-channel MOSFET, meaning that it is an N-type FET which has been fabricated over an oxide layer, increasing its current-carrying capacity and reducing its leakage current. The oxide layer also increases the reliability and stability of the device, typically allowing for higher operating temperatures and faster switching speeds.
A major benefit of using the SI5456DU-T1-GE3 is that it is able to operate at lower power, meaning that, when compared to BJTs (bipolar junction transistors), it can save power while delivering comparable performance. Additionally, the MOSFET typically requires less board space than recently developed components such as vibrating-membrane transistors, making it suitable for a wide range of applications.
The working principle of the SI5456DU-T1-GE3 is relatively simple. It is capable of transferring current through a channel between its source and drain terminals. The gate terminal is used to control the conductivity of the channel. When the potential difference between the gate and the source terminal is increased, the channel opens and a current passes between the source and drain terminals. Conversely, when the potential difference between the gate and the source terminal is decreased, the current flow reduces and the channel closes. This is due to the FET\'s negative resistance characteristics, which enable it to control the flow of current in this manner.
The SI5456DU-T1-GE3 is used in a variety of applications, from consumer electronics to industrial applications. Common consumer applications include audio equipment such as CD players, MP3 players, and speakers. It can also be used in various automotive applications, such as radio receivers, temperature controls, and power windows. Additionally, it is commonly used in industrial applications, such as robotic systems, automated assembly lines, and machine control modules.
The SI5456DU-T1-GE3 is a versatile component that can be used in a variety of applications where low power and small size are of primary concern. Its simple working principle and ability to control the flow of current make it an excellent choice for a wide range of applications, from consumer electronics to industrial applications.
The specific data is subject to PDF, and the above content is for reference
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