Allicdata Part #: | SI5442DU-T1-GE3TR-ND |
Manufacturer Part#: |
SI5442DU-T1-GE3 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Siliconix |
Short Description: | MOSFET N-CH 20V 25A PPAK CHIPFET |
More Detail: | N-Channel 20V 25A (Tc) 3.1W (Ta), 31W (Tc) Surface... |
DataSheet: | SI5442DU-T1-GE3 Datasheet/PDF |
Quantity: | 36000 |
Vgs(th) (Max) @ Id: | 900mV @ 250µA |
Package / Case: | PowerPAK® ChipFET™ Single |
Supplier Device Package: | PowerPAK® ChipFet Single |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 3.1W (Ta), 31W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 1700pF @ 10V |
Vgs (Max): | ±8V |
Gate Charge (Qg) (Max) @ Vgs: | 45nC @ 8V |
Series: | TrenchFET® |
Rds On (Max) @ Id, Vgs: | 10 mOhm @ 8A, 4.5V |
Drive Voltage (Max Rds On, Min Rds On): | 1.8V, 4.5V |
Current - Continuous Drain (Id) @ 25°C: | 25A (Tc) |
Drain to Source Voltage (Vdss): | 20V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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The SI5442DU-T1-GE3 is a type of MOSFET (Metal-Oxide Semiconductor Field-Effect Transistor) that functions as a voltage-controlled electronic switch. It is an ideal device for efficient power management in modern electronic devices. The SI5442DU-T1-GE3 is suited for a wide range of applications, including high frequency power switchings and power supply sequencing.
In general, MOSFETs operate by allowing a certain level of electrical current to pass between two terminals when triggered by a voltage signal. This type of device is advantageous over traditional transistors because it can be switched on and off rapidly, while consuming very little power. Additionally, they are very reliable and require very low input currents, making them the ideal choice for use in high frequency circuits.
The SI5442DU-T1-GE3 is an example of a single-channel MOSFET, and is specifically designed for use in audio, video, and communication applications. It operates at a very low operating voltage of 2.5V, with a maximum output current of 8A. It also features short circuit protection and thermal protection, making it very safe and reliable. The device is packaged in a small, surface mountable SOT-559 package, making it perfect for use in space-constrained design applications.
The main working principle of the SI5442DU-T1-GE3 is very simple. When a voltage signal is applied to the gate, it allows an electrical current to pass through the active region of the device. The amount of current that passes through the device is determined by the voltage signal applied to the gate and the resistance of the active region. The SI5442DU-T1-GE3 has an on-resistance of 5 ohms and an off-resistance of 100k ohms, making it the perfect choice for high efficiency applications.
The SI5442DU-T1-GE3 is an ideal choice for a wide range of applications that require efficient power management. It is suitable for use in audio, video, and communications equipment, where short circuit and thermal protection are paramount. Additionally, its low operating voltage and reliable operation make it perfect for use in space-constrained designs. Thus, the SI5442DU-T1-GE3 is an invaluable component for today’s modern electronic devices.
The specific data is subject to PDF, and the above content is for reference
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