Allicdata Part #: | SI5414DC-T1-GE3-ND |
Manufacturer Part#: |
SI5414DC-T1-GE3 |
Price: | $ 0.22 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Siliconix |
Short Description: | MOSFET N-CH 20V 6A 1206-8 |
More Detail: | N-Channel 20V 6A (Tc) 2.5W (Ta), 6.3W (Tc) Surface... |
DataSheet: | SI5414DC-T1-GE3 Datasheet/PDF |
Quantity: | 1000 |
3000 +: | $ 0.19960 |
Vgs(th) (Max) @ Id: | 1.5V @ 250µA |
Package / Case: | 8-SMD, Flat Lead |
Supplier Device Package: | 1206-8 ChipFET™ |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 2.5W (Ta), 6.3W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 1500pF @ 10V |
Vgs (Max): | ±12V |
Gate Charge (Qg) (Max) @ Vgs: | 41nC @ 10V |
Series: | TrenchFET® |
Rds On (Max) @ Id, Vgs: | 17 mOhm @ 9.9A, 4.5V |
Drive Voltage (Max Rds On, Min Rds On): | 2.5V, 4.5V |
Current - Continuous Drain (Id) @ 25°C: | 6A (Tc) |
Drain to Source Voltage (Vdss): | 20V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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The SI5414DC-T1-GE3 is a single-channel MOSFET device that is typically used in high-side and low-side switching applications. It is an enhancement-mode MOSFET and is rated for a maximum voltage of 20V and a maximum current of 3A. Its operating temperature range is -40°C to +85°C.
The SI5414DC-T1-GE3 is designed to provide efficient and reliable switching and is suitable for a variety of general-purpose applications. It is suitable for use in automotive, medical, industrial, and consumer applications. It is also well-suited for use in motor, solenoid and light-emitting diode (LED) applications where it is important to reduce power consumption.
The SI5414DC-T1-GE3 works on the principle of a Metal Oxide Semiconductor Field Effect Transistor (MOSFET). It is composed of an insulated gate, which is surrounded by two regions of a semiconductor material, one of which is positively charged and the other is negatively charged. When a voltage is applied to the gate, it changes the conductivity of the channel between the source and drains. Depending on the graph of the device, the flow of current can be varied depending on the voltage applied to the gate.
In applications where the SI5414DC-T1-GE3 is used as a high-side switch, the device is connected between a positive supply and the drain. The source is then connected to a negative supply or ground. When a voltage is applied to the gate, the device becomes conductive and current is allowed to flow from the positive supply to the drain. In this way, the SI5414DC-T1-GE3 can be used to switch loads in the range of 3A at 20V.
In designs where the SI5414DC-T1-GE3 is used as a low-side switch, the device is connected between the drain and ground. The source is then connected to a positive supply. When a voltage is applied to the gate, the device becomes conductive and current is allowed to flow from the positive supply to ground. In this way, the SI5414DC-T1-GE3 can be used to switch loads in the range of 3A at 20V.
In the automotive industry, the SI5414DC-T1-GE3 is commonly used as a high-side switch to regulate power to electric motors or control the speed of a fan. In medical and industrial applications, the device can be used as a low-side switch to control the current in a solenoid or LED. In consumer products, the device can be used to switch power to multiple devices in a distributed power system.
The SI5414DC-T1-GE3 is a reliable, efficient, and cost-effective MOSFET device that is suitable for a wide range of general-purpose applications. It is designed to provide reliable and efficient switching and is suitable for a variety of automotive, medical, industrial, and consumer applications.
The specific data is subject to PDF, and the above content is for reference
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