SI5441DC-T1-E3

Vgs(th) (Max) @ Id:	1.4V @ 250µA
Package / Case:	8-SMD, Flat Lead
Supplier Device Package:	1206-8 ChipFET™
Mounting Type:	Surface Mount
Operating Temperature:	-55°C ~ 150°C (TJ)
Power Dissipation (Max):	1.3W (Ta)
FET Feature:	--
Vgs (Max):	±12V
Gate Charge (Qg) (Max) @ Vgs:	22nC @ 4.5V
Series:	TrenchFET®
Rds On (Max) @ Id, Vgs:	55 mOhm @ 3.9A, 4.5V
Drive Voltage (Max Rds On, Min Rds On):	2.5V, 4.5V
Current - Continuous Drain (Id) @ 25°C:	3.9A (Ta)
Drain to Source Voltage (Vdss):	20V
Technology:	MOSFET (Metal Oxide)
FET Type:	P-Channel
Part Status:	Obsolete
Packaging:	Tape & Reel (TR)

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SI5441DC-T1-E3 Application Field and Working Principle

The SI5441DC-T1-E3 is a N-channel depletion field-effect transistor (FET) that is primarily used by those who need to control large volumes, either for ground potential difference or for the regulation of electrical current flow. It belongs to the category of transistors known as single field-effect transistors or single FETs.A FET is an electronic device that consists of two electrodes, a source and a drain, filled with a material such as silicon. The way it works is that when a small electric current is applied to the gate terminal, it induces a gap in the material between the source and drain electrodes and the current is controlled or regulated.The SI5441DC-T1-E3 is a single FET and is able to operate with a buck mode, a boost mode, and a free-wheeling mode. It is capable of providing excellent low-voltage performance and is able to operate reliably even at very low temperatures. It is also able to operate with narrow supply voltages, and can also operate in continuous conduction mode.The SI5441DC-T1-E3’s excellent performance is due to its efficient construction. It is made up of two N-channel MOSFETs, or metal oxide semiconductor field effect transistors, and these are connected in parallel. The two electrodes are in the same plane and are powered by a single gate. This allows for enhanced electrical performance due to the increased gate and channel area, as well as the reduction of thermal resistance.The heat sink design of the SI5441DC-T1-E3 also makes it more efficient, as much of the energy used is dissipated more easily than other FETs. This reduces the need for additional cooling and also increases its durability, as it is able to withstand very high temperatures while still operating optimally.The SI5441DC-T1-E3 is highly versatile and is used by a wide variety of electronics engineers who require a device that is both reliable and efficient. It is often used for regulating or controlling the current flow in a variety of applications, such as automotive electronics, telecommunications, medical electronics, and home entertainment systems.The SI5441DC-T1-E3 is a powerful and reliable single FET that is suitable for a wide range of applications. It is able to regulate or control the current flow efficiently and reliably, even when faced with extreme temperatures or changes in voltage. It is also highly versatile and is suitable for use in a variety of different applications, from medical electronics to home entertainment systems.

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