SI5484DU-T1-E3

Vgs(th) (Max) @ Id:	2V @ 250µA
Package / Case:	PowerPAK® ChipFET™ Single
Supplier Device Package:	PowerPAK® ChipFet Single
Mounting Type:	Surface Mount
Operating Temperature:	-55°C ~ 150°C (TJ)
Power Dissipation (Max):	3.1W (Ta), 31W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	1600pF @ 10V
Vgs (Max):	±12V
Gate Charge (Qg) (Max) @ Vgs:	55nC @ 10V
Series:	TrenchFET®
Rds On (Max) @ Id, Vgs:	16 mOhm @ 7.6A, 4.5V
Drive Voltage (Max Rds On, Min Rds On):	2.5V, 4.5V
Current - Continuous Drain (Id) @ 25°C:	12A (Tc)
Drain to Source Voltage (Vdss):	20V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Obsolete
Packaging:	Tape & Reel (TR)

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Introduction

The SI5484DU-T1-E3 is a single normally-on, depletion-mode, n-channel, low-voltage MOSFET. This device is designed for a wide range of general-purpose applications including tablets, smartphones, and other consumer electronics. With a breakdown voltage of -4.0V, an on-resistance of 18Ω, and low threshold, it makes the device ideal for low-voltage and low-current applications. The SI5484DU-T1-E3 does not require a gate driver and can be used in radio-frequency applications.

Application Field

The SI5484DU-T1-E3 is mainly used in consumer electronics, medical, and automotive applications. The device is ideal for applications that require a low on-resistance, low threshold, and breakdown voltages lower than -4.0V. In consumer electronics, it is used to switch power in tablet and smartphone systems. It is also used in medical applications such as stents and medical implants. In automotive applications, it is used in body electronics and interior lighting applications.

Working Principle

The SI5484DU-T1-E3 is a depletion-mode MOSFET that operates in a normally-on condition. This means that the device is on when no gate voltage is applied. As the gate voltage is applied, the device exhibits a high impedance. This high impedance limits the current that could flow between the drain and source and prevents current spikes from occurring. The device is manufactured with a high-performance silicon process technology that reduces the on-resistance to 18Ω. This low on-resistance further enhances the performance of the device. The low threshold voltage makes it ideal for low-voltage applications. The device does not require a gate driver as it can be operated using an ultra-low gate drive current of 2.3mA with a supply voltage of -4.0V. This makes it well suited for radio-frequency applications.

Conclusion

In conclusion, the SI5484DU-T1-E

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