SI7404DN-T1-GE3

Vgs(th) (Max) @ Id:	1.5V @ 250µA
Package / Case:	PowerPAK® 1212-8
Supplier Device Package:	PowerPAK® 1212-8
Mounting Type:	Surface Mount
Operating Temperature:	-55°C ~ 150°C (TJ)
Power Dissipation (Max):	1.5W (Ta)
FET Feature:	--
Vgs (Max):	±12V
Gate Charge (Qg) (Max) @ Vgs:	30nC @ 4.5V
Series:	TrenchFET®
Rds On (Max) @ Id, Vgs:	13 mOhm @ 13.3A, 10V
Drive Voltage (Max Rds On, Min Rds On):	2.5V, 10V
Current - Continuous Drain (Id) @ 25°C:	8.5A (Ta)
Drain to Source Voltage (Vdss):	30V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Obsolete
Packaging:	Tape & Reel (TR)

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SI7404DN-T1-GE3 is a single N-channel insulated gate MOSFET, which is made of high-performance semiconductor material and provides high switching performance and reliable operation. Due to the high voltage insulation characteristics of this device, it is suitable for high voltage applications. This device has a wide range of applications in the fields of low power, high frequency power conversion and AC power supply.The working principle of SI7404DN-T1-GE3 is relatively simple. Basically, it works by controlling the gate-source voltage applied to the insulated gate MOSFET. By adjusting the voltage between the gate and the source of the device, current can be allowed to flow through the device, thus enabling it to perform its expected function.When the gate-source voltage is at 0V (normally open state ), the transistor can block current and act as an open circuit. This condition is also known as “cutoff”. In this state, no current flows through the device and no voltage drops across its terminals.When the gate-source voltage is higher than 0V, the transistor can allow current to flow. This is also known as “saturation” or “on-state”. In this state, the device can act as a switch, allowing current to flow through it. However, due to its output resistance, it can still drop some voltage across its terminals.The switching performance of SI7404DN-T1-GE3 is determined by two main parameters: the channel resistance (RDS(on)) and the avalanche energy breakdown (EAS). The channel resistance determines the amount of current that can be allowed to flow through the device. The avalanche energy breakdown determines the absolute maximum voltage that can be applied to the device before it will start to break down.As for its applications, SI7404DN-T1-GE3 has a wide range of applications. Its high switching performance and reliable operation make it ideal for low power and high frequency power conversion. It can be used in AC power supplies, DC power conversion, uninterruptible power supplies (UPSs), motors and other applications where power efficiency and reliability are critical.In conclusion, SI7404DN-T1-GE3 is a single N-channel insulated gate MOSFET that can provide excellent switching performance and reliable operation. Its simple working principle, high voltage insulation characteristics and wide range of applications make it a highly suitable choice for many power conversion applications.

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