SI7430DP-T1-GE3 Discrete Semiconductor Products

Vgs(th) (Max) @ Id:	4.5V @ 250µA
Package / Case:	PowerPAK® SO-8
Supplier Device Package:	PowerPAK® SO-8
Mounting Type:	Surface Mount
Operating Temperature:	-55°C ~ 150°C (TJ)
Power Dissipation (Max):	5.2W (Ta), 64W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	1735pF @ 50V
Vgs (Max):	±20V
Gate Charge (Qg) (Max) @ Vgs:	43nC @ 10V
Series:	--
Rds On (Max) @ Id, Vgs:	45 mOhm @ 5A, 10V
Drive Voltage (Max Rds On, Min Rds On):	8V, 10V
Current - Continuous Drain (Id) @ 25°C:	26A (Tc)
Drain to Source Voltage (Vdss):	150V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Active
Packaging:	Tape & Reel (TR)

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<p>The SI7430DP-T1-GE3 is a high-voltage, single-channel Field Effect Transistor (FET) designed for use as a Power Switching N-Channel Enhancement Mode MOSFET.</p><p>The SI7430DP-T1-GE3 is manufactured using the field-proven Gen 3 Silicon-On-Insulator (SOI) technology that has been the industry standard for over 10 years. The device features an optimized low Ron and low Coss, low Rds_on, and a high breakdown voltage.</p><p>The SI7430DP-T1-GE3 is suitable for use in a wide variety of applications such as switch mode power supplies, DC/DC converters, load switches, and other power management applications.</p><p><strong>Application Field</strong></p><p>The SI7430DP-T1-GE3 is primarily used in applications that require high voltage, high current, and fast switching capabilities. It is used in a wide variety of industrial, automotive, and commercial applications such as automotive electronics, motor drives, lighting, power control and motor control circuits.</p><p>In automotive applications, the SI7430DP-T1-GE3 can be used in body control systems, powertrain systems, and safety electronics. For example, it can be used in cruise control applications, power steering systems, and power windows. It is also used in home automation and white goods, such as power ovens, power locks, and power window switches.</p><p>The SI7430DP-T1-GE3 is also used in portable devices such as phones, cameras, and tablets, as well as in consumer electronics and medical applications including breathalyzers, glucose monitors, defibrillators, and other cardiovascular and neurological medical devices.</p><p><strong>Working Principle</strong></p><p>The SI7430DP-T1-GE3 is an N-Channel Enhancement Mode MOSFET, meaning that it is a type of field effect transistor that operates by modulation of the channel’s electron density. When a voltage is applied to the gate of the FET, the level of charge carriers in the channel increases, resulting in a decrease in resistance.</p><p>The SI7430DP-T1-GE3 is an excellent choice for applications that require switching at high voltages and high current levels, due to its low Ron and low Coss, and high breakdown voltage. This device provides excellent dynamic performance, reliability, and a low power consumption.</p><p>The SI7430DP-T1-GE3 also offers low total gate charge, fast switching speeds, and excellent thermal performance, making it an attractive choice for use in applications that require fast switching and high current output.</p><p>In addition, the SI7430DP-T1-GE3 has a wide operating temperature range of -55°C to +125°C, making it suitable for use in a variety of applications and environments.</p><p>The SI7430DP-T1-GE3 is an excellent choice for applications requiring high voltage and high current switching with excellent dynamic performance, reliability, low power consumption, and an extended temperature range. It is suitable for use in a wide variety of industrial, automotive, commercial, and consumer applications.</p>

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