STW12NK60Z Allicdata Electronics
Allicdata Part #:

497-10995-5-ND

Manufacturer Part#:

STW12NK60Z

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: STMicroelectronics
Short Description: MOSFET N-CH 600V 10A TO-247
More Detail: N-Channel 600V 10A (Tc) 150W (Tc) Through Hole TO-...
DataSheet: STW12NK60Z datasheetSTW12NK60Z Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Vgs(th) (Max) @ Id: 4.5V @ 100µA
Package / Case: TO-247-3
Supplier Device Package: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Power Dissipation (Max): 150W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 1740pF @ 25V
Vgs (Max): ±30V
Gate Charge (Qg) (Max) @ Vgs: 59nC @ 10V
Series: SuperMESH™
Rds On (Max) @ Id, Vgs: 640 mOhm @ 5A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Drain to Source Voltage (Vdss): 600V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Tube 
Description

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The STW12NK60Z is a N-channel MOSFET designed for a wide range of applications such as switching, power supply and motor control. It is a mostly used transistor when designs need low on-state resistance and high-switching speed. It is a single-N-channel MOSFET transistor, manufactured by ST Microelectronics. As a digital switch, the MOSFETs operate as a voltage-controlled device, quickly switching between high- and low-conductivity states.

The STW12NK60Z has a maximum drain current of 10 Amperes and a maximum drain source voltage of 600 Volts. It features an extremely low on-state resistance of 0.007 Ohms maximum, making it ideal for low-loss power switching applications like motor control, dc to dc converters, or regulating load currents. The maximum gate source voltage of the MOSFET is 20 volts and the gate threshold voltage is 3 volts. It has a thermal resistance of 1.8 degrees Celsius per watt, which is ideal for high-temperature operation.

The MOSFET\'s gate affects its drain and source. When a voltage is applied to the gate of the FET, it forms an electric field that attracts electrons to the drain, allowing current to flow from the drain to the source. The MOSFET acts like a voltage-controlled switch, enabling current to flow when a certain voltage is applied to the gate. It works on the principle of electrostatic attraction between the MOSFET\'s gate and its drain and source, by controlling the flow of electrons between the two.

The STW12NK60Z offers a variety of benefits such as low power dissipation and fast switching has made it a popular choice for a wide range of applications. It is widely used in power supply circuits, motor control, lighting control and motor drive circuits. Its low on-state resistance and high-switching speed make it well suited for applications that require the transfer of power between multiple nodes.

When designing with the STW12NK60Z MOSFET, special attention needs to be taken to the ground connection, as this affects the performance of the device. Also, it is important to ensure that circuit boards are properly insulated to avoid electrical shorts and unexpected performance changes. Electrical protection should also be taken into account to guard against ongoing current and voltage transients, as the transients could potentially damage the MOSFET, resulting in costly downtime.

In conclusion, the STW12NK60Z is an N-channel MOSFET transistor, which is suitable for a wide range of applications such as power supply, motor control and switching. It features an extremely low on-state resistance and high-switching speed, making it a great choice for high-performance circuits. In order to ensure the full performance of the MOSFET, careful consideration should be taken with regards to the circuitry and grounding, as well as electrical protection.

The specific data is subject to PDF, and the above content is for reference

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