STW13NK80Z

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The STW13NK80Z is a vertical DMOS FET which is a single, high-performance and versatile device. It is mainly utilized in telecommunication systems, including WiMAX, and has non-overlapping, self-protected reverse-blocking features. It has great heat dissipation and a wide rated VDS between 10V and 200V, making it suitable for a range of applications.This article will focus on the STW13NK80Z’s application field and its working principle.

Application Fields of STW13NK80Z

The STW13NK80Z is ideal for applications requiring superior power output and a low on-resistance. It can be used in a variety of devices, such as personal computers, mobile phones, TVs, industrial equipment, and broadband communication equipment, such as Digital Subscriber Line (DSL) and Wireless Local Area Network (WLAN) transceivers. Additionally, it can be used in automotive applications, such as lighting, Vehicle Local Area Network (VLAN) systems, and AC inverters.

This FET is well-suited to applications needing high-power operation with a minimum on-resistance of only 0.13 ohms. As such, it works well in voltage regulators, power MOSFETs, and other high-current switching operations. Its built-in protection and low drain-source on-resistance make it particularly well-suited for high-side switch applications, such as in motor control systems.

The STW13NK80Z is ideal for SMPS (switch mode power supplies) applications due to its fast switching speed, low gate capacitance, and low drain-source on-resistance. It can be used in primary switch converters, secondary switch converters, resonant converters, low frequency pulse width modulation (PWM) controllers, and other SMPS topologies.

Working Principle of STW13NK80Z

The STW13NK80Z is a vertical DMOS FET, which is a special type of FET with a vertical structure. It offers low drain-source on-resistance and low gate capacitance, making it suitable for high-efficiency application. The basic construction of the FET consists of a silicon substrate, a drain, gate, and source region. The drain and source are connected to the top and bottom of the FET, respectively, and the gate is connected to the center.

When the gate voltage is zero, no current can pass through the FET. When a positive voltage is applied to the gate, it generates a field effect, and a channel is created between the drain and source, allowing current to flow. The size of the channel is dependent on the magnitude of the gate voltage, and the current flow is directly proportional to the gate voltage.

The STW13NK80Z has protective features that ensure it operates safely and reliably. It has built-in reverse blocking protection, which prevents the FET from operating in reverse and damaging itself. It also has non-overlapping circuits and multiple junction protection, which protect the FET from any excessive forward voltage or current. Additionally, the FET features pulsed current operation to ensure it can handle large and short current pulses.

Overall, the STW13NK80Z is a high-performance and versatile FET with a wide range of possible applications. It has a low on-resistance and fast switching speeds, making it an ideal choice for high-current applications. Additionally, it has built-in responsive and protective features, which make it a safe and reliable choice for a variety of applications.

The specific data is subject to PDF, and the above content is for reference