Allicdata Part #: | TSM10NB60CIC0G-ND |
Manufacturer Part#: |
TSM10NB60CI C0G |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Taiwan Semiconductor Corporation |
Short Description: | MOSFET N-CH 600V 10A ITO220 |
More Detail: | N-Channel 600V 10A (Tc) 50W (Tc) Through Hole ITO-... |
DataSheet: | TSM10NB60CI C0G Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tube |
Part Status: | Obsolete |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 600V |
Current - Continuous Drain (Id) @ 25°C: | 10A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Rds On (Max) @ Id, Vgs: | 750 mOhm @ 5A, 10V |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 39nC @ 10V |
Vgs (Max): | ±30V |
Input Capacitance (Ciss) (Max) @ Vds: | 1820pF @ 25V |
FET Feature: | -- |
Power Dissipation (Max): | 50W (Tc) |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Through Hole |
Supplier Device Package: | ITO-220 |
Package / Case: | TO-220-3 Full Pack, Isolated Tab |
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The TSM10NB60CI C0G is currently one of the most used field effect transistors ( FETs) in the market today. It is used in a wide range of applications and is one of the most well-known FETs available. This article will provide a detailed look into the TSM10NB60CI C0G, the different applications it is used in and the working principle behind it.
Background
The TSM10NB60CI C0G is a metal-oxide semi-conductor field effect transistor (MOSFET). It is designed for high-efficiency operations and can handle voltages up to 600V. It has a maximum power dissipation of 20W and a drain-source voltage of 110A. It has 16 leads in a package size of 2.3mm x 1.15mm. It is also highly efficient, operating at temperatures ranging from -40°C to 150°C.
Application Field of The TSM10NB60CI C0G
The TSM10NB60CI C0G is a popular choice for power-handling applications. Due to its excellent efficiency, it is often used to control the flow of current by providing a variable resistor. This is especially helpful in power-handling applications. Its high-efficiency allows it to manage larger currents than other MOSFETs.
The TSM10NB60CI C0G is also used in switching applications. It provides an on/off switch for circuits, allowing current to flow through it when needed and cutting it off when not in use. This allows for switches that are more reliable and require less energy on a circuit board. The device can also be used in power control, such as in solar inverters or motor controllers.
The TSM10NB60CI C0G is also frequently used in automotive applications. It can be used in electronic control units (ECUs) to help control engine performance. The device is also popular for power switching in automotive battery management systems as well as for lighting applications.
Working Principle of The TSM10NB60CI C0G
The TSM10NB60CI C0G is a field effect transistor. This means that it is controlled through the application of an electric field. The device works by applying a voltage on the gate of the device and allowing current to flow between the source and drain. This voltage will determine the conductivity of the device, allowing current to flow or reduce the flow depending on the field applied.
The TSM10NB60CI C0G is a small signal low-power transistor, meaning that it is designed to work with low voltages and currents. It is also designed to work at relatively low frequencies, so it is not suitable for high-speed applications. However, it is ideal for applications that require low power and current.
The TSM10NB60CI C0G is a unipolar transistor, meaning that current will only flow when positive gate-source voltage is applied. This transistor can handle up to 600 volts and has an on/off ratio of 1A/100mV. This means that for every 100mV increase in gate-source voltage, the current through the drain will increase by 1A.
Conclusion
The TSM10NB60CI C0G is a widely used transistor, specially designed to work in high-efficiency applications. It is frequently used in power-handling, switching and automotive applications. The device is a field effect transistor and is controlled through the application of an electric field. It is a small signal low-power transistor, designed to work with low voltages and currents. It is a unipolar transistor and can handle voltages up to 600V with an on/off ratio of 1A/100mV.
The specific data is subject to PDF, and the above content is for reference
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