TSM1NB60CP ROG

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The TSM1NB60CP ROG is a dual N-channel logic-level metal oxide semiconductor field-effect transistor (MOSFET) designed for both high-side and low-side switching applications in two different drain-source voltage ratings.

Introduction

The TSM1NB60CP ROG is a low-side and high-side driver, designed for automotive applications such as engine control and drive motors. The TSM1NB60CP ROG is a MOSFET with a 600V blocking voltage, capable of carrying a maximum gate-source voltage up to 20V. It comes in a small package, reducing packaging costs and making the device more energy efficient. The high-current and low on-resistance characteristics make the TSM1NB60CP ROG suitable for switching a wide range of power applications. The TSM1NB60CP ROG is also capable of reducing losses and generation of acoustic noise due to its low ESR and ultra-low gate charge.

Application field

The TSM1NB60CP ROG is well suited for car engine control and drive motor applications. It can be used for in-vehicle or automotive switching purposes, such as those seen in starter parts, brake light circuits, fuel injection systems and several other automotive components.

Due to its low on-resistance, high current, and fast switching speed, the TSM1NB60CP ROG is especially suitable for applications in power converters, motor drivers and in inverters for renewable energy sources. It is also suitable for modern smart circuit boards and home appliances.

Working principle

The TSM1NB60CP ROG MOSFET works by using the electric field to control the conductive path between the source and drain. When a negative voltage is applied to its gate terminal, a depletion zone is formed in the channel between the source and the drain. This zone impedes the flow of electrons, resulting in a low-conductive path and creating an off-state. When a positive voltage is applied to the gate terminal, the electric field reduces and electrons can freely flow creating a high-conductive path and creating an on-state.

The main advantage of the TSM1NB60CP ROG MOSFET over bipolar junction transistors (BJTs) is its non-saturation feature. This means that the current does not saturate at a particular value, allowing the device to operate in a linear region and maintain a constant output current in a wide range of input voltages. This makes the device ideal for switching high-power applications with low losses.

Conclusion

In conclusion, the TSM1NB60CP ROG is a dual N-channel logic-level metal oxide semiconductor field-effect transistor (MOSFET) designed for both high-side and low-side switching applications. Due to its low on-resistance, high current and fast switching speed, it is suitable for automotive applications such as car engine control, drive motors and starter parts, as well as home appliance and power converter circuit boards. It operates by using an electric field to control the path between the source and the drain, creating an on-state or an off-state depending on the applied voltage. The TSM1NB60CP ROG is thus a suitable device for use in high-power applications with low losses.

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