Allicdata Part #: | TSM110NB04CRRLGTR-ND |
Manufacturer Part#: |
TSM110NB04CR RLG |
Price: | $ 0.22 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Taiwan Semiconductor Corporation |
Short Description: | MOSFET SINGLE N-CHANNEL TRENCH |
More Detail: | N-Channel 40V 12A (Ta), 54A (Tc) 3.1W (Ta), 68W (T... |
DataSheet: | TSM110NB04CR RLG Datasheet/PDF |
Quantity: | 1000 |
2500 +: | $ 0.19550 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 40V |
Current - Continuous Drain (Id) @ 25°C: | 12A (Ta), 54A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Rds On (Max) @ Id, Vgs: | 11 mOhm @ 12A, 10V |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 23nC @ 10V |
Vgs (Max): | ±20V |
Input Capacitance (Ciss) (Max) @ Vds: | 1443pF @ 20V |
FET Feature: | -- |
Power Dissipation (Max): | 3.1W (Ta), 68W (Tc) |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | 8-PDFN (5x6) |
Package / Case: | 8-PowerLDFN |
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The TSM110NB04CR RLG device belongs to the family of transistors FETs, MOSFETs and single. This type of transistor is mainly used in surface mount applications specially designed for high-voltage operation. This particular device is used in applications such as power supply, motor control, and automotive power. TSM110NB04CR RLG is an essential component in the semiconductor world, used widely in a variety of electronic systems.
TSM110NB04CR RLG is a high-value transistor which is suitable for high frequency applications. It has an RDSon rating of 4 Ohms, a drain-source voltage rating of 50V, and a peak drain current of 10A. The high power rating, low on-resistance, and high frequency make this transistor particularly suitable for high-power applications. The device is also capable of withstanding voltage transients up to 130V.
The working principle of TSM110NB04CR RLG is based on the use of an insulated gate which regulates the flow of electrons in the channel. When an o voltage is applied to the gate, a depletion region forms, creating a gate-source voltage or VGS, which is used to control the drain current or ID. As the drain current increases, the device enters a state called saturation, where it is able to handle large amount of current without any increase in the gate-source voltage. As the current increases, the device enters a state of linear operation, which is characterized by a small increase in the gate-source voltage for every increase in the drain current.
The application field for this device includes motor control, power supply and automotive power. Due to its high peak drain current, it is highly suitable for use in motor control. In automotive power applications, its high-voltage resistance capability makes it an ideal device for both safety and efficiency. In power supplies, it is particularly used in modules that need to handle large amount of currents, such as SMPSs, DC to DC converters, and other applications.
The TSM110NB04CR RLG device is a great tool for any designer who wants to increase the efficiency and safety of their product. With its high-value ratings and good working principle, it provides a great platform for building applications and increasing the performance of any system.
The specific data is subject to PDF, and the above content is for reference
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