Allicdata Part #: | TSM1N45DCSRLGTR-ND |
Manufacturer Part#: |
TSM1N45DCS RLG |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Taiwan Semiconductor Corporation |
Short Description: | MOSFET N-CH 450V 500MA 8SOP |
More Detail: | N-Channel 450V 500mA (Tc) 900mW (Ta) Surface Mount... |
DataSheet: | TSM1N45DCS RLG Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 450V |
Current - Continuous Drain (Id) @ 25°C: | 500mA (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Rds On (Max) @ Id, Vgs: | 4.25 Ohm @ 250mA, 10V |
Vgs(th) (Max) @ Id: | 4.9V @ 250mA |
Gate Charge (Qg) (Max) @ Vgs: | 6.5nC @ 10V |
Vgs (Max): | ±50V |
Input Capacitance (Ciss) (Max) @ Vds: | 185pF @ 25V |
FET Feature: | -- |
Power Dissipation (Max): | 900mW (Ta) |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | 8-SOP |
Package / Case: | 8-SOIC (0.154", 3.90mm Width) |
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The TSM1N45DCS RLG is a single MOSFET (metal-oxide-semiconductor field-effect transistor) that has been designed specifically for radiation-hard and radiation-tolerant applications in the space environment. It offers superior performance in terms of breakdown voltage, linearity, avalanche, switching characteristics and latch-up immunity. This article will discuss the application fields that the TSM1N45DCS RLG is suitable for, as well as its basic working principle.
Application Fields
The TSM1N45DCS RLG is primarily used in space applications that require radiation tolerance. It is suitable for a variety of power switching and control applications such as command and control, attitude and energy control systems. It is also suitable for logic control, switching and timing control applications in satellites and space vehicles.In addition to its application in space systems, the TSM1N45DCS RLG is also suitable for high-voltage, high-power and high-sensitivity applications such as motor control, industrial motor drives, and motor control loops. It is also capable of operating in an environment with high temperatures and vibrations. The TSM1N45DCS RLG is also suitable for special-purpose applications such as high-voltage, radiation-tolerant power supplies, control units and motor control systems.
Working Principle
MOSFETs are transistors that allow current to flow through the device when a voltage is applied to the gate electrode. The TSM1N45DCS RLG consists of a gate oxide, a gate electrode, source and drain electrodes, and a semiconductor channel that are made of a silicon substrate.When a voltage is applied to the gate electrode, it attracts electrons from the substrate to form a conductive channel between the source and drain electrodes. This in turn allows for current to flow through the device. The signal source (a voltage source) controls the amount of current that flows through the device by controlling the voltage applied at the gate.In addition to the basic principles of operation, the TSM1N45DCS RLG also offers superior performance in terms of breakdown voltage, linearity, avalanche, switching characteristics and latch-up immunity. The device is also capable of operating in an environment with high temperatures and vibrations.
Conclusion
The TSM1N45DCS RLG is a single MOSFET device with excellent performance for space applications. It has been designed specifically for radiation-hard applications and is suitable for a variety of power switching and control applications. It is also suitable for special-purpose applications such as high-voltage, radiation-tolerant power supplies, control units and motor control systems. The device operates on the principles of MOSFETs, where a voltage applied to the gate electrode controls the current flow. The TSM1N45DCS RLG also offers superior performance in terms of breakdown voltage, linearity, avalanche, switching characteristics and latch-up immunity, making it suitable for use in high-sensitivity and high temperature environments.
The specific data is subject to PDF, and the above content is for reference
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