TSM13N50ACZ C0G Allicdata Electronics
Allicdata Part #:

TSM13N50ACZC0G-ND

Manufacturer Part#:

TSM13N50ACZ C0G

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Taiwan Semiconductor Corporation
Short Description: MOSFET N-CHANNEL 500V 13A TO220
More Detail: N-Channel 500V 13A (Tc) 52W (Tc) Through Hole TO-2...
DataSheet: TSM13N50ACZ C0G datasheetTSM13N50ACZ C0G Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tube 
Part Status: Obsolete
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 500V
Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 480 mOhm @ 6.5A, 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 31nC @ 10V
Vgs (Max): ±30V
Input Capacitance (Ciss) (Max) @ Vds: 1965pF @ 25V
FET Feature: --
Power Dissipation (Max): 52W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-220
Package / Case: TO-220-3
Description

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TSM13N50ACZ C0G application field and working principle

The TSM13N50ACZ C0G is a low chip-based MOSFET. It is designed to help protect sensitive components and circuits from damage, and it is especially ideal for use in automotive, industrial, and medical applications. The MOSFET offers excellent thermal resistance and low RDS(on). It also offers high-speed switching performance and low gate charge, making it an ideal choice for automotive, industrial, and medical systems.

The TSM13N50ACZ C0G is a single-gate, enhanced oscillator type FET in the TO-220 package. It operates on a range of input voltages from 10V to 16V. The device features both thermal and electrical protection features, making it beneficial for use in power application areas. Its maximum dc drain current is 13A and it has a drain-source breakdown voltage of 500V. The maximum gate threshold voltage is 4V and the maximum gate-to-source voltage is 20V.

How does the TSM13N50ACZ C0G work?

The TSM13N50ACZ C0G works by using a charge transfer mechanism. This mechanism works by transferring a static electric charge from the source to the drain. When the gate is switched off, no charge will be transferred. When the gate is switched on, a static electric charge is transferred from the source to the drain. This process is what makes the FET a switch.

The FET is designed to allow electricity to flow in one direction only. When the gate is off, no charge will be transferred. When the gate is on, a static electric charge is transferred from the source to the drain. The amount of current that flows is determined by the resistance between the source and the drain. The higher the resistance, the less current will flow. This prevents the device from being overloaded.

The TSM13N50ACZ C0G is ideal for switching applications that require fast response time and low RDS(on). It is also suitable for use in automotive, industrial, and medical applications. The device also features thermal and electrical protection features, making it beneficial for use in power application areas that require high switching speeds.

Conclusion

In conclusion, the TSM13N50ACZ C0G is a low chip-based MOSFET designed to provide excellent thermal and low RDS(on). It offers high-speed switching performance and low gate charge, making it a great choice for automotive, industrial, and medical applications. The FET works by using charge transfer mechanism, which allows electricity to flow in one direction only. This makes the FET a switch, as it can turn electricity on and off. The device offers excellent thermal and electrical protection features, making it beneficial for use in power applications that require high switching speeds.

The specific data is subject to PDF, and the above content is for reference

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