Allicdata Part #: | TSM13N50ACZC0G-ND |
Manufacturer Part#: |
TSM13N50ACZ C0G |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Taiwan Semiconductor Corporation |
Short Description: | MOSFET N-CHANNEL 500V 13A TO220 |
More Detail: | N-Channel 500V 13A (Tc) 52W (Tc) Through Hole TO-2... |
DataSheet: | TSM13N50ACZ C0G Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tube |
Part Status: | Obsolete |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 500V |
Current - Continuous Drain (Id) @ 25°C: | 13A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Rds On (Max) @ Id, Vgs: | 480 mOhm @ 6.5A, 10V |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 31nC @ 10V |
Vgs (Max): | ±30V |
Input Capacitance (Ciss) (Max) @ Vds: | 1965pF @ 25V |
FET Feature: | -- |
Power Dissipation (Max): | 52W (Tc) |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Through Hole |
Supplier Device Package: | TO-220 |
Package / Case: | TO-220-3 |
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TSM13N50ACZ C0G application field and working principle
The TSM13N50ACZ C0G is a low chip-based MOSFET. It is designed to help protect sensitive components and circuits from damage, and it is especially ideal for use in automotive, industrial, and medical applications. The MOSFET offers excellent thermal resistance and low RDS(on). It also offers high-speed switching performance and low gate charge, making it an ideal choice for automotive, industrial, and medical systems.
The TSM13N50ACZ C0G is a single-gate, enhanced oscillator type FET in the TO-220 package. It operates on a range of input voltages from 10V to 16V. The device features both thermal and electrical protection features, making it beneficial for use in power application areas. Its maximum dc drain current is 13A and it has a drain-source breakdown voltage of 500V. The maximum gate threshold voltage is 4V and the maximum gate-to-source voltage is 20V.
How does the TSM13N50ACZ C0G work?
The TSM13N50ACZ C0G works by using a charge transfer mechanism. This mechanism works by transferring a static electric charge from the source to the drain. When the gate is switched off, no charge will be transferred. When the gate is switched on, a static electric charge is transferred from the source to the drain. This process is what makes the FET a switch.
The FET is designed to allow electricity to flow in one direction only. When the gate is off, no charge will be transferred. When the gate is on, a static electric charge is transferred from the source to the drain. The amount of current that flows is determined by the resistance between the source and the drain. The higher the resistance, the less current will flow. This prevents the device from being overloaded.
The TSM13N50ACZ C0G is ideal for switching applications that require fast response time and low RDS(on). It is also suitable for use in automotive, industrial, and medical applications. The device also features thermal and electrical protection features, making it beneficial for use in power application areas that require high switching speeds.
Conclusion
In conclusion, the TSM13N50ACZ C0G is a low chip-based MOSFET designed to provide excellent thermal and low RDS(on). It offers high-speed switching performance and low gate charge, making it a great choice for automotive, industrial, and medical applications. The FET works by using charge transfer mechanism, which allows electricity to flow in one direction only. This makes the FET a switch, as it can turn electricity on and off. The device offers excellent thermal and electrical protection features, making it beneficial for use in power applications that require high switching speeds.
The specific data is subject to PDF, and the above content is for reference
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