Allicdata Part #: | TSM180P03CSRLGTR-ND |
Manufacturer Part#: |
TSM180P03CS RLG |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Taiwan Semiconductor Corporation |
Short Description: | MOSFET P-CHANNEL 30V 10A 8SOP |
More Detail: | P-Channel 30V 10A (Tc) 2.5W (Tc) Surface Mount 8-S... |
DataSheet: | TSM180P03CS RLG Datasheet/PDF |
Quantity: | 2500 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
FET Type: | P-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 30V |
Current - Continuous Drain (Id) @ 25°C: | 10A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Rds On (Max) @ Id, Vgs: | 18 mOhm @ 8A, 10V |
Vgs(th) (Max) @ Id: | 2.5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 23nC @ 4.5V |
Vgs (Max): | ±20V |
Input Capacitance (Ciss) (Max) @ Vds: | 1730pF @ 15V |
FET Feature: | -- |
Power Dissipation (Max): | 2.5W (Tc) |
Operating Temperature: | 150°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | 8-SOP |
Package / Case: | 8-SOIC (0.154", 3.90mm Width) |
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The TSM180P03CS RGL is a high-voltage, high-current MOSFET transistor typically used for driving large motors or LED lighting. It is a single N-channel MOSFET with a drain-source breakdown voltage of 180 V and a current rating of 5.5 A. The RGL stands for "reverse gate leakage", which makes it suitable for circuits that need high speed switching and power dissipation.
MOSFET transistors are semiconductor devices with a three-terminal structure – the source, gate, and drain. They are built on an insulating substrate and operate as resistors but with a controllable gate. A MOSFET\'s gate is normally at ground potential and no current flows between the gate and the drain. By applying a voltage to the gate, current can flow between the source and drain, thus acting as a switch. The on and off states of the MOSFET are determined by the magnitude and polarity of the gate voltage.
The TSM180P03CS RGL is a MOSFET optimized for high speed switching and efficient power dissipation. Its main advantage is that it can switch very fast because the gate is electrically isolated from the drain. As a result, the capacitance between the two is very low, allowing the transistor to respond quickly. The MOSFET also has a low reverse gate leakage, meaning that the drain current is reduced when the gate voltage is zero, allowing it to be used in low power circuits.
The TSM180P03CS RGL is typically used for driving large motors, as it can handle high voltage and currents without needing additional protection. It is also suitable for LED lighting applications, as it can efficiently convert electrical energy into light. The MOSFET\'s high switching speed and low reverse gate leakage make it well-suited for high power and low power switching applications.
In summary, the TSM180P03CS RGL is a high-voltage, high-current MOSFET optimized for high speed switching and efficient power dissipation. It is typically used for driving large motors or LED lighting, as it can handle high voltage, currents, and has low reverse gate leakage. It is a reliable and efficient device for a wide range of applications.
The specific data is subject to PDF, and the above content is for reference
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