2N7000-D75Z

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The 2N7000-D75Z FET is a silicon N-channel metal oxide semiconductor field-effect transistor (MOSFET) designed for power switching applications. Widely used in interference filters, RF modulators and other systems requiring low-noise, low-distortion levels, it is particularly well suited as a low-noise switch between circuits and DC power sources, often in medical, automotive, and audio applications.

The 2N7000-D75Z is built on a moderately large drain junction with a vertical structure that provides low on-resistance and high power handling capability.

The drain junction is insulated from the source junction with a layer of gate oxide, allowing the transfer of electric current between the source and drain terminals. As such, the current flow is largely unaffected by any changes in the drain or gate voltage, making the MOSFET an ideal choice for switching applications, especially for RF and high-frequency signals.

The drain junction is organized in a triangular way, making it a good choice for many types of RF and high-frequency applications, and a good candidate for voltage-controlled applications. This geometry ensures that the on-resistance is very low, lessening the effects of thermal stress, inductance and capacitance.

The drain junction requires a certain minimum voltage to operate, referred to as the “threshold voltage.” The 2N7000-D75Z is rated for a threshold voltage of 3V. This allows for long-term reliability and high-performance operation.

The drain junction is connected to the source through two transistors, which are switched between two different states. The N-side transistor (N7000) is always in the OFF state, while the P-side transistor (P75Z), is in the ON state when the drain voltage is higher than the threshold voltage.

When the P75Z is in the ON state, the N7000 is in the OFF state, allowing only the current flowing through the N7000 to flow through the drain junction. This restriction of current flow is beneficial in preventing power losses. The gate voltage controls the voltage level on the gate, thus controlling the state of the transistor.

The 2N7000-D75Z is a powerful, efficient, and highly-capable MOSFET, making it an ideal choice for a variety of power switching applications. Its wide range of applications in interference filters, RF modulators and other systems requiring low-noise, low-distortion levels make it a great choice for those looking for reliable power switching solutions.

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